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59 results

Conference Proceedings

1. Structure Evolution of 3C-SiC on Cubic and Hexagonat Substrates

Yakimova, R. ; Yazdi, G.R. ; Sritirawisarn, N. ; Syvajarvi, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.283-286, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. Stability of Thick Layers Grown on (1-100) and (11-20) Orientations of 4H-SiC

Syvajarvi, M. ; Yakimova, R. ; Yazdi, G.R. ; Arjunan, A. ; Toupitsyn, E. ; Sudarshan, T.S.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.227-230, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. Wannier-Stark Ladder and Negative Differential Conductance in 4H-SiC

Sankin, V.I. ; Yakimova, R.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.707-710, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

4. The Limit of SiC Detector Energy Resolution in Ion Spectometry

Yakimova, R. ; Lebedev, A.A. ; Ivanov, A.M. ; Strokan, N.B. ; Syvajarvi, M.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1477-1482, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

5. Investigation of the SiC Transistor and Diode Nuclear Detectors at 8 MeV Proton Irradiation

Strokan, N. B. ; Ivanov, A. M. ; Savkina, N. S. ; Lebedev, A. A. ; Kozlovski, V. V. ; Syvajarvi, M. ; Yakimova, R.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.1025-1028, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. High Field Effect Mobility in Si Face 4H-SiC MOSFET Made on Sublimation Grown Epitaxial Material

Sveinbjornsson, E. O. ; Olafsson, H. O. ; Gudjonsson, G. ; Allerstam, F. ; Nilsson, P. A. ; Syvajarvi, M. ; Yakimova, R. ; Hallin, C. ; Rodle, T. ; Jos, R.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.841-844, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

7. Domain Structure of Thick GaN Layers Grown by Hydride Vapor Phase Epitaxy

Paskova, T. ; Svedberg, E. B. ; Madsen, L. D. ; Yakimova, R. ; Ivanov, I. G. ; Henry, A. ; Monemar, B.

Pub. info.:	GaN and related alloys : symposium held November 30-December 4, 1998, Boston, Massachusetts, U.S.A.. pp.G3.16.1-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	537

Conference Proceedings

8. Process Induced Extended Defects in SiC Grown via Sublimation

Yakimova, R. ; Syvajarvi, M. ; Jacobson, H. ; Ciechonski, R.R. ; Vouroutzis, N. ; Stoemenos, J.

Pub. info.:	Silicon carbide 2002 -- materials, processing and devices : symposium held December 2-4, 2002, Boston, Massachusetts, U.S.A.. pp.187-198, 2003. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	742

Conference Proceedings

9. Behavior of Micropipes during Growth in 4H-SiC

Vouroutzis, N. ; Yakimova, R. ; Syvaejaervi, M. ; Jacobson, H. ; Stoemenos, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.395-398, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvaejaervi, M. ; Wilzen, L. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.929-932, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Yakimova, R.