1.

Conference Proceedings
Conference Proceedings
1. Estimation of Radiation-Induced Complex Concentration in CZ-Si by IR Absorption Spectroscopy
Y. Yonezawa ; N. Inoue ; Y. Takubo ; Y. Goto ; T. Sugiyama
Pub. info.: High Purity Silicon 10.  pp.343-350,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(6)
2.

Conference Proceedings
Conference Proceedings
2. Pragmatic Approach to the Characterization of SiC/SiO2 Interface Traps near the Conduction Band with Split C-V and Hall Measurements
T. Hatakeyama ; K. Takao ; Y. Yonezawa ; H. Yano
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.477-480,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
3.

Conference Proceedings
Conference Proceedings
3. Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices
S. Katakami ; M. Arai ; K. Takenaka ; Y. Yonezawa ; H. Ishimori
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.709-712,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Characterization of Screw Dislocations in a 4H-Silicon Carbide Diode Using X-Ray Microbeam Three-Dimensional Topography
R. Tanuma ; T. Tamori ; Y. Yonezawa ; H. Yamaguchi ; H. Matsuhata
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.251-254,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
5.

Conference Proceedings
Conference Proceedings
5. Analyses of High Leakage Currents in Al+ Implanted 4H SiC pn Diodes Caused by Threading Screw Dislocations
T. Tsuji ; T. Tawara ; R. Tanuma ; Y. Yonezawa ; N. Iwamuro
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.913-916,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
6.

Conference Proceedings
Conference Proceedings
6. Device Performance and Switching Characteristics of 16 kV Ultrahigh-Voltage SiC Flip-Type n-Channel IE-IGBTs
Y. Yonezawa ; T. Mizushima ; K. Takenaka ; H. Fujisawa ; T. Deguchi
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.842-846,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
7.

Conference Proceedings
Conference Proceedings
7. Analysis of Trench-Filling Epitaxial Growth of 4H-SiC Based on Continuous Fluid Approximation Including Gibbs-Thomson Effect
K. Mochizuki ; S.Y. Ji ; R. Kosugi ; K. Kojima ; Y. Yonezawa ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.47-50,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
8.

Conference Proceedings
Conference Proceedings
8. Extension of Stacking Faults in 4H-SiC pn Diodes under a High Current Pulse Stress
Y. Iwahashi ; M. Miyazato ; M. Miyajima ; Y. Yonezawa ; T. Kato ; H. Fujiwara ; K. Hamada ; A. Otsuki ; H. Okumura
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.218-221,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
9.

Conference Proceedings
Conference Proceedings
9. Suppression of the Forward Degradation in 4H-SiC PiN Diodes by Employing a Recombination-Enhanced Buffer Layer
T. Tawara ; T. Miyazawa ; M. Ryo ; M. Miyazato ; T. Fujimoto ; K. Takenaka ; S. Matsunaga ; M. Miyajima ; A. Otsuki ; Y. Yonezawa ; T. Kato ; H. Okumura ; T. Kimoto ; H. Tsuchida
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.419-422,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897