1.

Conference Proceedings
Conference Proceedings
1. Fourier Transform Analysis of Basal Plane Dislocation Structure in Repeated A-Face Grown Crystals
I. Gunjishima ; Y. Urakami ; F. Hirose ; A. Adachi ; S. Onda
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.319-322,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
2.

Conference Proceedings
Conference Proceedings
2. TSD Reduction by RAF (Repeated a-Face) Growth Method
Y. Urakami ; I. Gunjishima ; S. Yamaguchi ; H. Kondo ; F. Hirose
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.9-12,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Growth of Low Resistivity n-Type 4H-SiC Bulk Crystals by Sublimation Method Using Co-Doping Technique
T. Kato ; K. Eto ; S. Takagi ; T. Miura ; Y. Urakami
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.47-50,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Development of RAF Quality 150mm 4H-SiC Wafer
H. Kondo ; H. Takaba ; M. Yamada ; Y. Urakami ; T. Okamoto
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.17-21,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
5.

Conference Proceedings
Conference Proceedings
5. Growth Study of p-Type 4H-SiC with Using Aluminum and Nitrogen Co-Doping by 2-Zone Heating Sublimation Method
K. Eto ; T. Kato ; S. Takagi ; T. Miura ; Y. Urakami
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.47-50,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
6.

Conference Proceedings
Conference Proceedings
6. Characterization of Vacant Broken Line Defects in A-Face Grown Crystals of Silicon Carbide
N. Sugiyama ; M. Yamada ; Y. Urakami ; M. Kobayashi ; T. Masuda
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.386-389,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780