1.

Conference Proceedings
Conference Proceedings
1. Single Metal/Dual High-κ CMISFETs without High-κ-induced Vth Variation by MgO or Al2O3 Incorporation
N. Mise ; T. Morooka ; T. Eimori ; T. Ono ; Y. Nara
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.11-18,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. HfSiON Gate Dielectrics for hp45 Node and Beyond
Y. Nara ; S. Inumiya ; K. Torii ; K. Nakamura
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.645-652,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
3.

Conference Proceedings
Conference Proceedings
3. Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack
Y. Pei ; S. Nagamachi ; H. Murakami ; S. Higashi ; S. Miyazaki ; T. Kawahara ; K. Torii ; Y. Nara
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.163-172,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
4.

Conference Proceedings
Conference Proceedings
4. Practical Gate-First Metal Gate/Dual High-k CMOS Integration with Low Threshold Voltages
Y. Nara ; N. Mise ; M. Kadoshima ; T. Morooka ; S. Kamiyama
Pub. info.: Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.  pp.209-218,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(2)
5.

Conference Proceedings
Conference Proceedings
5. Dopant Activation Phenomenon by Flash Lamp Annealing
S. Kato ; Y. Nara ; T. Aoyama ; T. Onizawa ; Y. Ohji
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 4 : new materials, processes and equipment.  pp.45-54,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(1)
6.

Conference Proceedings
Conference Proceedings
6. Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO₂ Related High-k Dielectrics Interfaces
K. Shiraishi ; K. Torii ; Y. Akasaka ; T. Nakayama ; T. Nakaoka ; S. Miyazaki ; T. Chikyow ; K. Yamada ; Y. Nara
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.479-494,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
7.

Conference Proceedings
Conference Proceedings
7. Composition Control of TaSi xN y Thin Films by Chemical Vapor Deposition for Future n-MOSFET Metal Gate Electrode
Y. Sugita ; F. Aoyama ; Y. Nara
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.333-340,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
8.

Conference Proceedings
Conference Proceedings
8. Improvement in NBTI of Metal Gate pMOSFETs with Sub-1nm EOT HfSiON Gate Dielectric by Ar/N₂/H₂(D₂) Plasma Nitridation
S. Inumiya ; T. Aoyama ; Y. Nara
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.225-232,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
9.

Conference Proceedings
Conference Proceedings
9. Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)
S. Miyazaki ; A. Ohta ; S. Inumiya ; Y. Nara ; K. Yamada
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.171-182,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
10.

Conference Proceedings
Conference Proceedings
10. Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂
K. Ohmori ; P. Ahmet ; K. Shiraishi ; K. Yamabe ; H. Watanabe ; Y. Akasaka ; N. Umezawa ; K. Nakajima ; M. Yoshitake ; T. Nakayama ; K. Chang ; K. Kakushima ; Y. Nara ; M. L. Green ; H. Iwai ; K. Yamada ; T. Cchikyow
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.351-362,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)