1.

Conference Proceedings
Conference Proceedings
1. Electrical Characterization of 1.2 kV-Class SiC MOSFET at High Temperature up to 380° C
Y. Nanen ; M. Aketa ; Y. Nakano ; H. Asahara ; T. Nakamura
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.885-888,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Improved Characteristics of SiC MOSFETs by Post-Oxidation Annealing in Ar at High Temperature
M. Kato ; Y. Nanen ; J. Suda ; T. Kimoto
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.445-448,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
3.

Conference Proceedings
Conference Proceedings
3. Preannealing Effect on Mobility of N-/Al-Coimplanted and Over-Oxidized 4H-SiC MOSFETs
Y. Nanen ; B. Zippelius ; S. Beljakowa ; L. Trapaidze ; M. Krieger
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.487-490,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
4.

Conference Proceedings
Conference Proceedings
4. Improved On-Current of 4H-SiC MOSFETs with a Three-Dimensional Gate Structure
Y. Nanen ; H. Yoshioka ; M. Noborio ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2008 : selected peer reviewed papers from the 7th European Conference on Silicon Carbide and Related Materials, September 7-11 Barcelona, Spain.  pp.753-756,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 615-617
5.

Conference Proceedings
Conference Proceedings
5. Impact of NO Annealing on Flatband Voltage Instability due to Charge Trapping in SiC MOS Devices
Y. Katsu ; T. Hosoi ; Y. Nanen ; T. Kimoto ; T. Shimura
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.599-602,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
6.

Conference Proceedings
Conference Proceedings
6. Designing of Quasi-Modulated Region in 4H-SiC Lateral RESURF MOSFETs
Y. Nanen ; J. Suda ; T. Kimoto
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.943-946,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780