1.

Conference Proceedings
Conference Proceedings
1. Defect Related Leakage Current Components in SiC Schottky Barrier Diode
K. Ohtsuka ; T. Nakatani ; A. Nagae ; H. Watanabe ; Y. Nakaki
Pub. info.: Defects-recognition, imaging and physics in semiconductors XIV : selected, peer reviewed papers from the 14th International Conference on Defects-Recognition, Imaging and Physics in Semiconductors, September 25-29, 2011, Miyazaki, Japan.  pp.53-56,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 725
2.

Conference Proceedings
Conference Proceedings
2. Characteristics of a Schottky Barrier Diode and the SiC Wafers Sliced by Wire Electrical Discharge Machining
H. Miyake ; N. Tomita ; Y. Nakaki ; T. Furusho ; A. Itokazu
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.784-787,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Designing and Fabrication of the VLD Edge Termination for 3.3 kV SiC SBD
K. Ebihara ; Y. Yamamoto ; Y. Nakaki ; S. Aya ; S. Nakata
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.791-794,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780