1.

Conference Proceedings
Conference Proceedings
1. Origin Analyses of Trapezoid-Shape Defects in 4-Deg.-off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography
T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; K. Momose ; T. Sato
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.374-377,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
2.

Conference Proceedings
Conference Proceedings
2. Defects Grouping and Characterizations of PL-Imaging Methods for 4H-SiC Epitaxial Layers
M. Odawara ; K. Kamei ; Y. Miyasaka ; T. Yamashita ; S. Takahashi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.382-385,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Step-Bunching Dependence of the Lifetime of MOS Capacitor on 4° Off-Axis Si-Face 4H-SiC Epitaxial Wafers
A. Bandoh ; K. Suzuki ; Y. Miyasaka ; H. Osawa ; T. Sato
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.611-614,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Origin Analyses of Obtuse Triangular Defects in 4deg.-Off 4H-SiC Epitaxial Wafers by Electron Microscopy and by Synchrotron X-Ray Topography
T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; H. Ohshima ; M. Sekine
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.649-652,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
5.

Conference Proceedings
Conference Proceedings
5. Characterization of (4,4)- and (5,3)-Type Stacking-Faults in 4deg.-Off 4H-SiC Epitaxial Wafers by Synchrotron X-Ray Topography and by Photo-Luminescence Spectroscopy
T. Yamashita ; H. Matsuhata ; Y. Miyasaka ; M. Odawara ; K. Momose
Pub. info.: Silicon carbide and related materials 2012 : selected, peer reviewed papers from the 9th European Conference on Silicon Carbide and Related Materials (ECSCRM 2012), September 2-6,2012, St. Petersburg, Russian Federation.  pp.585-588,  2013.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 740-742
6.

Conference Proceedings
Conference Proceedings
6. 4×1014 cm-3) 4H-SiC Epilayers
K. Fukada ; N. Ishibashi ; Y. Miyasaka ; A. Bandoh ; K. Momose ; H. Osawa
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.83-86,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897