1.

Conference Proceedings
Conference Proceedings
1. Demonstration of High Quality 4H-SiC Epitaxial Growth with Extremely Low Basal Plane Dislocation Density
T. Tanaka ; N. Kawabata ; Y. Mitani ; N. Tomita ; M. Tarutani
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.91-94,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
2.

Conference Proceedings
Conference Proceedings
2. Demonstration of High Quality 4H-SiC Epitaxy by Using the Two-Step Growth Method
Y. Mitani ; N. Tomita ; K. Hamano ; M. Tarutani ; T. Tanaka
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.167-170,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
3.

Conference Proceedings
Conference Proceedings
3. Inhomogeneous Deformation Observed Using High-Precision Markers Drawn by Electron Beam Lithography in a Magnesium Alloy with LPSO Phase
T. Morikawa ; Y. Mitani ; K. Higashida
Pub. info.: THERMEC 2009, 6th International Conference on PROCESSING & MANUFACTURING OF ADVANCED MATERIALS, Berlin, Germany, August 25-29, 2009.  pp.1574-1578,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 638-642
4.

Conference Proceedings
Conference Proceedings
4. Influence of Growth Pressure and Addition of HCl Gas on Growth Rate of 4H-SiC Epitaxy
T. Tanaka ; N. Kawabata ; Y. Mitani ; M. Sakai ; N. Tomita
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.133-136,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
5.

Conference Proceedings
Conference Proceedings
5. Dramatic Improvement of V fb Shift and Gm max with Ultra-thin and Ultra-low-leakage SiN-based SiON Gate Dielectrics
K. Muraoka ; D. Matsushita ; Y. Nakasaki ; K. Kato ; S. Kikuchi ; K. Sakuma ; Y. Mitani ; K. Eguchi ; M. Takayanagi
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.313-328,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)