1.

Conference Proceedings
Conference Proceedings
1. Si Emission into the Oxide Layer during Oxidation of Silicon Carbide
Y. Hijikata ; Y. Akasaka ; S. Yagi ; H. Yaguchi
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.553-556,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
2.

Conference Proceedings
Conference Proceedings
2. Photoemission Study of Metal/HfSiON Gate Stack
S. Miyazaki ; H. Yoshinaga ; A. Ohta ; Y. Akasaka ; K. Shiraishi
Pub. info.: Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.  pp.67-73,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(2)
3.

Conference Proceedings
Conference Proceedings
3. Theoretical Studies on Fermi Level Pining of Hf-Based High-κ Gate Stacks Based on Thermodynamics
K. Shiraishi ; Y. Akasaka ; G. Nakamura ; M. Kadoshima ; A. Ohta
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.125-133,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
4.

Conference Proceedings
Conference Proceedings
4. Role of the Ionicity in Defect Formation in Hf-Based Dielectrics
N. Umezawa ; K. Shiraishi ; S. Miyazaki ; A. Uedono ; Y. Akasaka
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.199-211,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
5.

Conference Proceedings
Conference Proceedings
5. Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO₂ Related High-k Dielectrics Interfaces
K. Shiraishi ; K. Torii ; Y. Akasaka ; T. Nakayama ; T. Nakaoka ; S. Miyazaki ; T. Chikyow ; K. Yamada ; Y. Nara
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.479-494,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
6.

Conference Proceedings
Conference Proceedings
6. Wide Controllability of Flatband Voltage in La₂O₃ Gate Stack Structures-Remarkable Advantages of La₂O₃ over HfO₂
K. Ohmori ; P. Ahmet ; K. Shiraishi ; K. Yamabe ; H. Watanabe ; Y. Akasaka ; N. Umezawa ; K. Nakajima ; M. Yoshitake ; T. Nakayama ; K. Chang ; K. Kakushima ; Y. Nara ; M. L. Green ; H. Iwai ; K. Yamada ; T. Cchikyow
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.351-362,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
7.

Conference Proceedings
Conference Proceedings
7. Physics of Metal/High-k Interfaces
T. Nakayama ; K. Shiraishi ; S. Miyazaki ; Y. Akasaka ; T. Nakaoka ; K. Torii ; A. Ohta ; P. Ahmet ; K. Ohmori ; N. Umezawa ; H. Watanabe ; T. Chikyow ; Y. Nara ; H. Iwal ; K. Yamada
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.129-142,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
8.

Conference Proceedings
Conference Proceedings
8. Ordered Structure in the Thermal Oxide Layer on Silicon Substrates
T. Shimura ; E. Mishima ; H. Watanabe ; K. Yasutake ; M. Umeno ; K. Tatsumura ; T. Watanabe ; I. Olidomari ; K. Yamada ; S. Kamiyama ; Y. Akasaka ; Y. Nara ; K. Nakamura
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.39-48,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
9.

Conference Proceedings
Conference Proceedings
9. New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces
K. Shiraishi ; T. Nakayatna ; Y. Akasaka ; S. Miyazaki ; T. Nakaoka ; K. Ohmori ; P. Abmet ; K. Torii ; H. Watanabe ; T. Chikyow ; Y. Nara ; H. Iwai ; K .Yamada
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.25-40,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
10.

Conference Proceedings
Conference Proceedings
10. Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics
N. Umezawa ; K. Shiraishi ; H. Watanabe ; K. Toni ; Y. Akasaka ; S. Inumiya ; M. Boero ; A. Uedono ; S. Miyazaki ; T. Ohno ; T. Chikyow ; K. Yamabe ; Y. Nara ; K. Yamada
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.63-78,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)