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12 results

Conference Proceedings

1. SELECTIVE RAPID THERMAL CVD OF GERMANIUM

Grider, D.T. ; Ozturk, M.C. ; Wortman, J.J. ; Littlejohn, M.A. ; Zhong, Y. ; Batchelor, D. ; Russell, P.

Pub. info.:	In-situ patterning : selective area deposition and etching : symposium held November 29-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.147-154, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	158

Conference Proceedings

2. INTEGRATED PREDEPOSITION CLEANING/PASSIVATION OF Si SURFACES FOR MOS DEVICES WITH Si02/Si INTERFACES

Hattangady, S. ; Misra, V. ; Yasuda, T. ; Xu, X.L. ; Hornung, B. ; Lucovsky, G. ; Wortman, J.J.

Pub. info.:	Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing. pp.288-295, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-7

Conference Proceedings

3. SELECTIVE REMOVAL OF SILICON-GERMANIUM: CHEMICAL AND REACTIVE ION ETCHING

Scott Johnson, F. ; Misra, Veena ; Wortman, J.J. ; Martin, Leanne R. ; Harris, Gari A. ; Maher, Dennis M.

Pub. info.:	Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.. pp.157-162, 1993. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	298

Conference Proceedings

4. TEMPERATURE DEPENDENT AMORPHIZATION OF SILICON DURING SELF IMPLANTATION

Maszara, W.P. ; Rozgonyi, G.A. ; Simpson, L. ; Wortman, J.J.

Pub. info.:	Beam-solid interactions and phase transformations : symposium held December 2-4, 1985, Boston, Massachusetts, USA. pp.381-388, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	51

Conference Proceedings

5. Ge+PREAMORPHIZATION OF Si: EFFECTS OF DOSE AND VERY LOW TEMPERATURE THERMAL TREATMENT ON EXTENDED DEFECT FORMATION DURING SUBSEQUENT SPE

Myers, E. ; Rozgonyi, G.A. ; Sadana, D.K. ; Maszara, W. ; Wortman, J.J. ; Narayan, J.

Pub. info.:	Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.. pp.107-114, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	52

Conference Proceedings

6. STABILITY OF HEAVILY DOPED Si FORMED BY As+ IMPLANTATION AND RAPID THERMAL ANNEALING

Numan, M.Z. ; Lu, Z.H. ; Chu, W.K. ; Fathy, D. ; Wortman, J.J.

Pub. info.:	Rapid thermal processing : symposium held December 2-4, 1985, Boston, Massachusetts, U.S.A.. pp.31-36, 1985. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	52

Conference Proceedings

7. INFLUENCE OF SURFACE PRE-CLEANING ON ELECTRICAL PROPERTIES OF RAPID THERMAL OXIDE AND RAPID THERMAL CHEMICAL VAPOR DEPOSITION OXIDE

Xu, Xiaoli ; Kuehn, R.T. ; Melzak, J.M. ; Hames, G.A. ; Wortman, J.J. ; Ozturk, M.C. ; Nemanich, R.J. ; Harris, G. ; Maher, D.

Pub. info.:	Chemical surface preparation, passivation, and cleaning for semiconductor growth and processing : symposium held April 27-29, 1992, San Francisco, California, U.S.A.. pp.81-86, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	259

Conference Proceedings

8. *INVESTIGATION OF THE HYDROGEN CONTENT OF SILICON IN AN INTEGRATED RAPID THERMAL PROCESSING REACTOR

George, M.A. ; Beck, S.E. ; Bohling, D.A. ; Hames, G.A. ; Wortman, J.J. ; Melzak, J.A.

Pub. info.:	Chemical perspectives of microelectric materials III : symposium held November 30-December 3, 1992, Boston, Massachusetts, U.S.A.. pp.481-492, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	282

Conference Proceedings

9. Properties of N- and P-Channel MOSFETs with Ultrathin RICYD Oxynitride Gate Dielectrics.

Vogel, E.M. ; Wortman, J.J.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films, proceedings of the fifth International Symposium. pp.90-106, 1999. Pennington, New Jersey. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-6

10.

Conference Proceedings

10. Formation of Stacked Gate Oxides by Rapid-Thermal Processing

Misra, V. ; Heinisch, H.H. ; Henson, W.K. ; Hornung, B.E. ; Wortman, J.J.

Pub. info.:	The physics and chemistry of SiO[2] and the Si-SiO[2] interface-3, 1996 : proceedings of the Third International Symposium on the Physics and Chemistry of SiO[2] and the Si-SiO[2] Interface. pp.282-294, 1996. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	96-1

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Author: Wortman, J.J.