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13 results

Conference Proceedings

1. On the Influence of the Interstitial Oxygen on DRAM Device Yield and Reliability

Winkler, R.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.475-482, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

2. GATE OXIDE QUALITY RELATED TO BULK PROPERTIES AND ITS INFLUENCE ON DRAM DEVICE PERFORMANCE

Winkler, R. ; Behnke, G.

Pub. info.:	Proceedings of the Seventh International Symposium on Silicon Materials Science and Technology. pp.973-986, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-10

Conference Proceedings

3. On the Effect of the Precipitation on DRAM Device Yield

Winkler, R.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.348-356, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

4. ELECRON ENERGY DISTRIBUTION FUNCTION IN RF MOLECULAR PLASMAS

Dilonardo, M. ; Capitelli, M. ; Winkler, R. ; Wilhelm J.

Pub. info.:	Plasma processing : symposium held April 15-18, 1986, Palo Alto, California, U.S.A.. pp.287-292, 1986. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	68

Conference Proceedings

5. The Gate oxide Quality of Annealed Cz Silicon Wafers and Its Influence on 4M DRAM Device Yield and Reliability

Winkler, R.

Pub. info.:	High Purity Silicon VI : proceedings of the sixth International Symposium. pp.434-440, 2000. Bellingham, Wash.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2000-17

Conference Proceedings

6. Transitions and Stability of A1C60

Kuzmany, H. ; Winkler, R. ; Winter, J.

Pub. info.:	Proceedings of the symposium on recent advances in the chemistry and physics of fullerenes and related materials. pp.823-847, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-10

Conference Proceedings

7. ON THE EFFECT OF EDGE POLISHING ON THE YIELD OF 4M BIT DRAMa

Winkler, R. ; Hanke, W.

Pub. info.:	Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology. pp.1325-1336, 1998. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	98-1(2)

Conference Proceedings

8. The Role of Metal Contamination and Crystal Defects in Quarter Micron Technology

Obry, M. ; Bergholz, W. ; Cerva, H. ; Kurner, W. ; Schrems, M. ; Sachse, J.-U. ; Winkler, R.

Pub. info.:	Proceedings of the Third International Symposium on Defects in Silicon. pp.133-149, 1999. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	99-1

Conference Proceedings

9. Nonlinear Response of Solids and Molecules in Intense Infrared Radiation

Pantelides, S. T. ; Winkler, R. ; Ferconi, M. ; Alvarez, J. J. V.

Pub. info.:	Multiscale modelling of materials : symposium held November 30-December 3, 1998, Boston, Massachusets, U.S.A.. pp.453-, 1999. Warrendale, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	538

10.

Conference Proceedings

10. On the Influence of Nitrogen and Carbon on the Formation of Dislocations in Heavily Doped Silicon Wafers

Winkler, R. ; Krautbauer, R. ; Pech, R.

Pub. info.:	High purity silicon VIII : proceedings of the international symposium. pp.55-59, 2004. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2004-05

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Author: Winkler, R.