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Conference Proceedings

1. ANISOTROPIC STRUCTURAL AND ELECTRONIC PROPERTIES OF InGaAs/GaAs HETEROJUNCTIONS

Goldman, R. S. ; Rammohan, K. ; Raisanen, A. ; Goorsky, M. ; Brillson, L. J. ; Rich, D. H. ; Wieder, H. H. ; Kavanagh, K. L.

Pub. info.:	Compound semiconductor epitaxy : symposium held April 4-7, 1994, San Francisco, California, U.S.A.. pp.349-, 1994. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	340

Conference Proceedings

2. Effects of Substrate Misorientati n Direction on Strain Relaxation at InGaAs/GaAs(001) Interfaces

Goldman, R. S. ; Wieder, H. H. ; Kavanagh, K. L.

Pub. info.:	Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.. pp.21-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	379

Conference Proceedings

3. Low Temperature Grown Thin InAlAs Step Graded Buffers for Application on Optical Modulator at 1.3 ｦﾌm

Shen, Lei ; Wieder, H. H. ; Chang, W. S. C.

Pub. info.:	Strained layer epitaxy - materials processing and device applications : symposium held April 17-19, 1995, San Francisco, California, U.S.A.. pp.297-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	379