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Conference Proceedings

1. Atomic Layer Epitaxy of (Si1-xC1-y)Gex+y Layers on 4H-SiC

Pezoldt, J. ; Kups, T. ; Weih, P. ; Stauden, T. ; Ambacher, O.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.1559-1562, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

2. High Dose High Temperature Ion Implantation of Ge into 4H-SiC

Kups, T. ; Weih, P. ; Voelskow, M. ; Skorupa, W. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005. pp.851-854, 2006. Stafa-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	527-529

Conference Proceedings

3. In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Weih, P. ; Stauden, Th. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.725-728, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

4. Growth of 3C-(Si1-xC1-y)Gex+y Layers on 4H-SiC by Molecular Beam Epitaxy

Weih, P. ; Romanus, H. ; Stauden, T. ; SpieB, L. ; Ambacher, O. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.173-176, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

5. Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

Morales, F.M. ; Zgheib, Ch. ; Molina, S.I. ; Araujo, D. ; Garcia, R. ; Fernandez, C. ; Sanz-Hervas, A. ; Masri, P. ; Weih, P. ; Stauden, Th. ; Ambacher, O. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.297-300, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

6. Stress Control in 3C-SiC Films Grown on Si(111)

Zgheib, Ch. ; Masri, P. ; Weih, P. ; Ambacher, O. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.301-304, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

7. Etching of SiC with Fluorine ECR Plasma

Foerster, Ch. ; Cimalla, V. ; Kosiba, R. ; Ecke, G. ; Weih, P. ; Ambacher, O. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.821-824, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

8. High-Resolution XRD Investigations of the Strain Reduction in 3C-SiC Thin Films Grown on Si (111) Substrates

Weih, P. ; Cimalla, V. ; Forster, C. ; Pezoldt, J. ; Stauden, Th. ; Spiess, L. ; Romanus, H. ; Hermann, M. ; Eickhoff, M. ; Masri, P. ; Ambacher, O.

Pub. info.:	Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden. pp.233-236, 2003. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	433-436

Conference Proceedings

9. Structure and Composition of 3C-SiC:Ge Alloys Grown on Si (111) Substrates by SSMBE

Weih, P. ; Cimalla, V. ; Stauden, Th. ; Kosiba, R. ; Spies, L. ; Romanus, H. ; Gubisch, M. ; Bock, W. ; Freitag, Th. ; Fricke, P. ; Ambacher, O. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.293-296, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Weih, P. ; Stauden, Th. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.725-728, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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Author: Weih, P.