1.

Conference Proceedings
Conference Proceedings
1. INCORPORATION OF EXCESS ARSENIC GaAs AND A1GaAs EPILAYERS GROWNT AT ALOW SUBSTRATE TEMPERATURES BY MOLECULAR BEAM EPITAXY
Melloch, M.R. ; Otsuka, N. ; Mahalingam, K. ; Warren, A.C. ; Woodall, J.M. ; Kirchner, P.D.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.113-124,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241
2.

Conference Proceedings
Conference Proceedings
2. *THE ELECTRICAL AND OPTICAL PROPERTIES OF GaAs WITH AS PRECIPITATES (GaAs:As)
Warren, A.C. ; Woodall, J.M. ; Burroughes, J.H. ; Kirchner, P.D. ; Heinrich, H.K. ; Arjavalingam, G. ; Katzenellenbogen, N. ; Grischkowsky, D. ; Melloch, M.R. ; Otsuka, N. ; Mahalingam, K. ; Pollak, F.H. ; Yin, X.
Pub. info.: Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A..  pp.15-26,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 241