1.

Conference Proceedings
Conference Proceedings
1. THE GROWTH MECHANISM OF DISLOCATION LOOPS IN ARSENIC IMPLANTED SILICON.
JONES,K.S. ; PRUSSIN,S. ; WEBER,E.R.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part2  pp.751-756,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
2.

Conference Proceedings
Conference Proceedings
2. INFLUENCE OF OXYGEN PRECIPITATES ON THE SOLUTION OF TRANSITION METALS IN SILICON.
COLAS,E.G. ; WEBER,E.R. ; HULL,R.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part3  pp.881-886,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12
3.

Conference Proceedings
Conference Proceedings
3. OBSERVATION OF STOICHIOMETRY CHANGES BENEATH METAL CONTACTS 0N GaAs.
LILIENTAL-WEBER,Z. ; WEBER,E.R. ; NEWMAN,N. ; SPICER,W.E. ; GRONSKY,R. ; WASHBURN,J.
Pub. info.: Defects in Semiconductors : Proceedings of the 14th International Conference on Defects in Semiconductors, ICDS-14, Paris, France, August 18-22, 1986.  Part3  pp.1223-1228,  1986.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 10-12