1.

Conference Proceedings
Conference Proceedings
1. Physical Characterization of the Metal/High-κ Layer Interaction upon Annealing
T. Conard ; A. Franquet ; W. Vandervorst ; M. Reading ; J. Van den Berg
Pub. info.: Physics and technology of high-k gate dielectrics 6.  pp.433-442,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(5)
2.

Conference Proceedings
Conference Proceedings
2. Junction Photovoltage (JPV) Techniques for Ultra-Shallow Junction Characterization
V.N. Faifer ; M.I. Current ; D. Schroder ; T. Clarysse ; W. Vandervorst
Pub. info.: Analytical and diagnostic techniques for semiconductor materials, devices and processes 7.  pp.135-147,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(3)
3.

Conference Proceedings
Conference Proceedings
3. 2D-TCAD Process Calibration for a High Speed QSA SiGe:C HBT Verified with SSRM
A. Sibaja-Hernandez ; P. Eyben ; S. van Huylenbroeck ; D. Vanhaeren ; W. Vandervorst
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.387-395,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
4.

Conference Proceedings
Conference Proceedings
4. Ge Epitaxy on (100) Ge: High Growth Rates at Low Temperature from GeH4 using N2 as a Carrier Gas
F. Leys ; R. Bonzom ; R. Loo ; A. Theuwis ; W. Vandervorst
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.209-210,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
5.

Conference Proceedings
Conference Proceedings
5. Micro-uniformity during laser anneal : metrology and physics
W. Vandervorst ; E. Rosseel ; R. Lin ; D. H. Petersen ; T. Clarysse ; J. Goossens ; P. F. Nielsen ; K. Churton
Pub. info.: Doping engineering for front-end processing : symposium held March 25-27, 2008, San Francisco, California, U.S.A..  pp.41-48,  2008.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 1070
6.

Conference Proceedings
Conference Proceedings
6. Metal/High-K Interface Interactions Upon High Temperature Annealing - Are They Cause of Workfunction Changes
T. Conard ; T. Schram ; A. Akheyar ; K. Arstila ; G. Zschaetzsch ; V. Paraschiv ; W. Vandervorst ; B. Brijs ; S. De Gendt ; Z. Jiang ; V. Kaushik ; J. Lenna ; L. Ragnarsson ; D. P. Brunco
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.159-170,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
7.

Conference Proceedings
Conference Proceedings
7. Ultra-Shallow Junctions Formed by Co-Implantation and Sub-Melt Laser Annealing
S. B. Felch ; A. Falepin ; S. Seven ; E. Augendre ; T. Noda ; V. Parihar ; F. Nouri ; T. Hoffinann ; B. Pawlak ; P. Eyben ; W. Vandervorst ; S. Thirupapuliyur ; R. Schreuelkamp ; E. Collart ; H. Graoui
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.105-112,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
8.

Conference Proceedings
Conference Proceedings
8. Study of Ni-Silicide Contacts to Si:C Source/Drain.
S. Mertens ; Y. Cho ; F. Nouri ; R. Schreutelkamp ; Y. Kim ; P. Verheyen ; J. Steenbergen ; C. Vrancken ; H. Bender ; O. Richard ; B. Van Daele ; W. Vandervorst ; P. Absil ; S. Kubicek ; C. Demeurisse ; Z. Tokei ; A. Lauwers ; L. Geenen
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 2: new materials, processes, and equipment.  pp.139-148,  2006.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(2)
9.

Conference Proceedings
Conference Proceedings
9. Junction Architectures for Planar Devices
B. J. Pawlak ; R. Duffy ; T. Hoffman ; S. Seven ; S. Feich ; P. Eyhen ; B. Van Daele ; W. Vandervorst ; R. J. Lander
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.351-364,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)