1.

Conference Proceedings
Conference Proceedings
1. Planar Bonded Double Gate MOS Transistors Down to LG = 10 nm (Invited paper)
Vinet, M. ; Widiez, J. ; Lolivier, J. ; Poiroux, T. ; Biasse, B. ; Previtali, B. ; Dechamp, J. ; Deleonibus, S.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.285-295,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
2.

Conference Proceedings
Conference Proceedings
2. Recent Results on Advanced Molecular Wafer Bonding Technology for 3D Integration on Silicon
di Cioccio, L. ; Biasse, B. ; Kostrzewa, M. ; Zussy, M. ; Dechamp, J. ; Charlet, B. ; Vinet, M. ; Fedeli, J.M. ; Poiroux, T. ; Lagahe-Blanchard, C. ; Aspar, B. ; Regreny, P. ; Kernevez, N.
Pub. info.: Semiconductor wafer bonding : science, technology, and applications : proceedings of the international symposia.  pp.280-287,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-02