1.

Conference Proceedings
Conference Proceedings
1. ION BEAM SYNTHESIS OF BURIED CoSi2 LAYERS IN SiGe ALLOYS
Jebasinski, R. ; Mantl, S. ; Dieker, Chr. ; Dederichs, H. ; Vescan, L. ; Butz, R.
Pub. info.: Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A..  pp.875-880,  1993.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 279
2.

Conference Proceedings
Conference Proceedings
2. REDUCTION OF MISFIT DISLOCATION DENSITY IN FINITE LATERAL SIZE Si1-XGeX FILMS GROWN BY SELECTIVE EPITAXY
Vescan, L. ; Stoica, T. ; Dieker, C. ; Luth, H.
Pub. info.: Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A..  pp.45-50,  1993.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 298
3.

Conference Proceedings
Conference Proceedings
3. Oblique Stacking of Three-Dimensional Dome Islands in Ge/Si Multilayers
Sutter, P. ; Sutter (Mateeva), E. ; Vescan, L.
Pub. info.: Growth, evolution and properties of surfaces, thin films and self-organized structures : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A..  2001.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 648
4.

Conference Proceedings
Conference Proceedings
4. Morphological Transition of Ge Islands on Si(001) Grown by LPCVD
Goryll, M. ; Vescan, L. ; Luth, H.
Pub. info.: Epitaxial growth - principles and applications : symposium held April 5-8, 1999, San Francisco, California, U.S.A..  pp.205-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 570
5.

Conference Proceedings
Conference Proceedings
5. Carbon-induced Ge islands on Si (001) grown by LPCVD
Goryll, M. ; Vescan, L. ; Luth, H.
Pub. info.: Morphological and compositional evolution of heteroepitaxial semiconductor thin films : symposium held April 24-27, 2000, San Francisco, California.  pp.115-,  2000.  Warrendale, Pennsylvania..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 618
6.

Conference Proceedings
Conference Proceedings
6. Si1-x Gex island formation by post-growth anneal on supercritical layers grown by RPCVD
Grimm, K. ; Vescan, L. ; Nanver, L. K. ; Visser, C. C. G. ; Luth, H.
Pub. info.: Morphological and compositional evolution of heteroepitaxial semiconductor thin films : symposium held April 24-27, 2000, San Francisco, California.  pp.129-,  2000.  Warrendale, Pennsylvania..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 618
7.

Conference Proceedings
Conference Proceedings
7. Investigation of Plastic Relaxation in Si1-xGex/Si Deposited by Selective Epitaxy
Wickenhauser, S. ; Vescan, L.
Pub. info.: Epitaxy and applications of si-based heterostructures : symposium held April 13-17, 1998, San Francisco, California, U.S.A..  pp.69-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 533
8.

Conference Proceedings
Conference Proceedings
8. FORMATION OF HETEROGENEOUS THICKNESS MODULATIONS DURING EPITAXIAL GROWTH OF LPCVD-Si1-XGeX/Si QUANTUM
Vescan, L. ; Jager, W. ; Dieker, C. ; Schmidt, K. ; Hartmann, A., ; L-th, H.
Pub. info.: Mechanisms of Heteroepitaxial growth : symposium held April 27-30, 1992, San Francisco, California, U.S.A..  pp.23-28,  1992.  Pittsburgh, PA.  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 263