1.

Conference Proceedings
Conference Proceedings
1. Emerging Device Solutions for the Post-Classical CMOS Era*
De Meyer, K. ; Collaert, N. ; Kubicek, S. ; Kottontharayil, A. ; van Meer, H. ; Verheyen, P.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.291-305,  2003.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-6
2.

Conference Proceedings
Conference Proceedings
2. Analysis of Junctions Formed in Strained Si/SiGe Substrates
Eneman, G. ; Simoen, E. ; Lauwers, A. ; Lindsay, R. ; Verheyen, P. ; Delhougne, R. ; Loo, R. ; Caymax, M. ; Meunier-Beillard, P. ; Demuynck, S. ; Meyer, K.De ; Vandervorst, W.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.187-192,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809
3.

Conference Proceedings
Conference Proceedings
3. P+/N Junction Formation in Thin Strain Relaxed Buffer Strained Silicon Substrates: The Effect of the Junction Anneal
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Simons, V. ; Loo, R. ; Caymax, M. ; De Meyer, K. ; Vandervorst, W. ; Claeys, C.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.338-348,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
4.

Conference Proceedings
Conference Proceedings
4. The Low-Frequency Noise in n-MOSFETs on Strained Silicon: Is There Room for Improvement?
Simoen, E. ; Eneman, G. ; Verheyen, P. ; Delhougne, R. ; Rooyackers, R. ; Loo, R. ; Vandervorst, W. ; De Meyer, K. ; Claeys, C.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.349-359,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
5.

Conference Proceedings
Conference Proceedings
5. 61 Impact of Recessed S/D SiGe Integration Parameters on Device Performance
Washington, L. ; Nouri, F. ; Verheyen, P. ; Moroz, V. ; Kawaguchi, M. ; Kim, Y. ; Samoilov, A. ; Jurczak, M.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.515-522,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
6.

Conference Proceedings
Conference Proceedings
6. N+/P and P+/N Junctions in Strained Si on Thin Strain Relaxed SiGe Buffers: the Effect of Defect Density and Layer Structure
Eneman, G. ; Simoen, E. ; Delhougne, R. ; Verheyen, P. ; Ries, M. ; Loo, R. ; Caymax, M. ; Vandervorst, W. ; De Meyer, K.
Pub. info.: Semiconductor defect engineering - materials, synthetic structures and devices : symposium held March 28-April 1, 2005, San Francisco, California, U.S.A..  pp.119-124,  2005.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 864
7.

Conference Proceedings
Conference Proceedings
7. (Selective) Epitaxial Growth of Strained Si to Fabricate Low Cost and High Performance CMOS Devices
Loo, R. ; Delhougne, R. ; Meunier-Beillard, P. ; Caymax, M. ; Verheyen, P. ; Eneman, G. ; Wolf, I.De ; Janssens, T. ; Benedetti, A. ; Meyer, K.De ; Vandervorst, W. ; Heyns, M.
Pub. info.: High-mobility group-IV materials and devices : symposium held April 13-15, 2004, San Francisco, California, U.S.A..  pp.3-14,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 809