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27 results

Conference Proceedings

1. SURFACE ORDERING OF MBE GROWN 001 Ga1-xA1xAs-A THEORETICAL STUDY

Triveli, Rita ; Venkatasubramanian, R.

Pub. info.:	Low temperature (LT) GaAs and related materials : symposium held December 4-6, 1991, Boston, Massachusetts, U.S.A.. pp.151-158, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	241

Conference Proceedings

2. ASPECTS OF “HIGH MINORITY-CARRIER LIFETIME” GaAs ON Si USING A NOVEL SiGe/Ge BUFFER

Venkatasubramanian, R. ; Posthill, J. B. ; Timmons, M. L. ; Ehsani, H. ; Ghandhi, S. K. ; Keyes, B. M. ; Ahrenkiel, R. K.

Pub. info.:	Heteroepitaxy of dissimilar materials : symposium held April 29-May 2, 1991, Anaheim, California, U.S.A.. pp.385-392, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	221

Conference Proceedings

3. OPTIMISATION OF THE HETEROEPITAXY OF Ge ON GaAs FOR MINORITY-CARRIER LIFETIME

Venkatasubramanian, R. ; Timmons, M. L. ; Bothra, S. ; Borrego, J. M.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.253-258, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

4. GaAs HETEROEPITAXY ON SUBSTRATE-ENGINEERED SILICON USING SiXGe1-X MULTILAYER STRUCTURE

Posthill, J. B. ; Venkatasubramanian, R. ; Malta, D. P. ; Hattangady, S. V. ; Fountain, G. G. ; Timmons,. M. L. ; Markunas, R. J.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.219-224, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

5. HIGH-CONDUCTANCE GaAs TUNNEL DIODES BY OMVPE

Venkatasubramanian, R. ; Timmons, M. L. ; Colpitts, T. S.

Pub. info.:	Atomic layer growth and processing : symposium held April 29 - May 1, 1991, Anaheim, California, U.S.A.. pp.163-176, 1991. Pittsburgh. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	222

Conference Proceedings

6. HETEROEPITAXY AND CHARACTERIZATION OF Ge-RICH SiGe ALLOYS ON GaAs

Venkatasubramanian, R. ; Timmons, M. L. ; Mantini, M. ; Kao, C. T. ; Parikh, N. R.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.547-552, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

7. *RADIATIVE RECOMBINATION AND CARRIER LIFETIMES IN SURFACE-FREE GaAs HOMOSTRUCTURES

Smith, L.M. ; Wolford, D.J. ; Venkatasubramanian, R. ; Ghandhi, S.K.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.95-108, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

8. DOPANT SITE LOCATION IN DUAL-IMPLANTED GaP USING {111} PLANAR CHANNELING

Parikh, N.R. ; Kao, C.T. ; Lee, D.R. ; Muse, J. ; Swanson, M.L. ; Haynes, T.E. ; Venkatasubramanian, R. ; Timmons, M.

Pub. info.:	Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.671-676, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	157

Conference Proceedings

9. HEAVILY-DOPED n+-GaAs WITH LOW COMPENSATION GROWN BY ATMOSPHERIC OMVPE

Venkatasubramanian, R. ; Ghandhi, S. K.

Pub. info.:	Advances in materials, processing, and devices in III-V compound semiconductors. pp.67-72, 1989. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	144

10.

Conference Proceedings

10. EL-2 DEFECT FORMATIN AND CARBON INCORPORATIN IN GaAs GROWN BY ORGANOMETALLIC VAPOR PHASE EPITAXY

Venkatasubramanian, R. ; Borrego, J.M. ; Ghandi, S.K.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.831-836, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

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