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11 results

Conference Proceedings

1. Optimization and Realization of Sub 100nm Channel Length Lateral Asymmetric Channel P-MOSFETS

Hemkar,M. ; Vasi,J. ; Rao,V.Ramgopal ; Cheng,B. ; Woo,J.C.S.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.584-587, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

2. Ionizing-Radiation Induced Degradation of SiGe HBTs

Topkar,A. ; Lodha,S. ; Mahfooz,A.T. ; Vasi,J. ; Lal,R. ; Nanver,L.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part1 pp.659-662, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

3. HOTMOS : A 2-D MOS Device Simulator for Hot Carrier Effects

Shaila Subbaraman ; Sharma,D.K. ; Vasi,J. ; Das,A.

Pub. info.:	Physics of - Semiconductor Devices -. Part 2 pp.1064-1067, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

4. Low Dose Radiation Sensor for Medical Therapy Applications

Anil,K.G. ; Vasi,J. ; Lal,R.

Pub. info.:	Physics of - Semiconductor Devices -. Part 2 pp.1145-1148, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

5. A New Technique to Profile Hot-Carrier Induced Interface State Generation in nMOSFETs using Charge Pumping

Mahapatra,S. ; Parikh,C.D. ; Vasi,J.

Pub. info.:	Physics of - Semiconductor Devices -. Part 2 pp.1030-1033, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

6. Device Simulation for Radiation and Hot Carrier Effects

Sharma,D.K. ; Ekbote,S. ; Zaman,P ; Shaila Subbaraman ; Das,A. ; Vasi,J.

Pub. info.:	Physics of - Semiconductor Devices -. Part 2 pp.974-979, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

Conference Proceedings

7. Modelling and Characterization of Commercial CMOS IC's under radiation

Shanware,A. ; Godambe,N. ; Vasi,J. ; Chandorkar,A. ; Das,A.

Pub. info.:	Semiconductor Devices. pp.72-74, 1996. Bellingham, WA, New Delhi. SPIE-The International Society for Optical Engineering — Narosa
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2733

Conference Proceedings

8. ULSI MOS Transistors with Jet Vapour Deposited(JVD)Silicon Nitride for the Gate Insulator

Mahapatra,S. ; Manjularani,K.N. ; Rao,V.Ramgopal ; Vasi,J.

Pub. info.:	Proceedings of the Tenth International Workshop on the Physics of Semiconductor Devices (December 14-18, 1999). Part2 pp.803-810, 2000. Bellingham, Wash.. SPIE - The International Society for Optical Engineering
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3975

Conference Proceedings

9. Radiation-Induced Degradation of Bipolar Transistors

Topkar,A. ; Mathew,T. ; Lal,R. ; Vasi,J. ; Nanver,L.

Pub. info.:	Physics of - Semiconductor Devices -. Part 1 pp.686-689, 1998. New Delhi. Narosa Publishing House
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	3316

10.

Conference Proceedings

10. Simulation of Radiation Effects in MOSFETs

Ekbote,S. ; Tambe,D. ; Zaman,P. ; Dangat,H.K. ; Khare,M. ; Sinha,P. ; Rodd,S. ; Bukhanwala,N. ; Vasi,J. ; Sharma,D.K. ; Das,A.

Pub. info.:	Semiconductor Devices. pp.57-59, 1996. Bellingham, WA, New Delhi. SPIE-The International Society for Optical Engineering — Narosa
Title of ser.:	Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.:	2733

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Author: Vasi,J.