1.

Conference Proceedings
Conference Proceedings
1. A COMPARATIVE STUDY OF Te- AND Ge BASED OHMIC CONTACTS ON GaAs
Wusts, K. ; Vantomme, A. ; Silverans, R. E ; Hove, Van M. ; Rossum, Van M.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.545-550,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. 29 Influence of Activation Annealing and Silicidation Process on as Redistribution and Pile-up at the NixSiy/SiO2 Interface
Pawlak, M. ; Kittl, J. A. ; Janssens, T. ; Lauwers, A. ; Vandervorst, W. ; Anil, K. G. ; Schram, T. ; Veloso, A. ; van Dal, M.J. H. ; Maex, K. ; Vantomme, A.
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.241-248,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
3.

Conference Proceedings
Conference Proceedings
3. GENERATION OF DEFECTS AND STRAIN BY ION IMPLANTATION IN Ge(100) SINGLE CRYSTALS, AND IN PSEUDOMORPHIC GeXSi1-X FILMS GROWN ON Si(100)
Lie, D. Y. C. ; Vantomme, A. ; Eisen, F. ; Nicolet, M.-A. ; Arbet-Engets, V. ; Wang, K. L.
Pub. info.: Defect engineering in semiconductor growth, processing and device technology : symposium held April 26-May 1, 1992, San Francisco, California, U.S.A..  pp.1079-1084,  1992.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 262
4.

Conference Proceedings
Conference Proceedings
4. Damage and Strain in Epitaxial Ge0.10Si0.90 After Si Implantation from 40 to 150 °C
Vantomme, A. ; Song, J. H. ; Lie, D. Y. C. ; Eisen, F. H. ; Nicolet, M. -A. ; Carns, T. K. ; Wang, K. L.
Pub. info.: Growth, processing, and characterization of semiconductor heterostructures : Symposium held November 29-December 2, 1993, Massachusetts, U.S.A..  pp.121-,  1994.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 326
5.

Conference Proceedings
Conference Proceedings
5. Comparative study of structural properties and photoluminescence in InGaN layers with a high in content
Vantomme, A. ; Wu, M. F. ; Hogg, S. ; Langouche, G. ; Jacobs, K. ; Moerman, I. ; White, M. E. ; O'Donnell, K. P. ; Nistor, L. ; Landuyt, J. Van ; Bender, H.
Pub. info.: GaN and related alloys - 1999 : symposium held November 28-December 3, 1999, Boston, Massachusetts, U.S.A..  pp.W11.38.1-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 595
6.

Conference Proceedings
Conference Proceedings
6. Controlled phase formation by using a diffusion barrier-The Fe-Si reaction
Theron, C. C. ; Falepin, A. ; Degroote, S. ; Dekoster, J. ; Vantomme, A. ; Langouche, G. ; Waal, H. S. de ; Pretorius, R.
Pub. info.: Nucleation and growth processes in materials : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.123-,  2000.  Pittsburgh, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 580
7.

Conference Proceedings
Conference Proceedings
7. THE INFLUENCE OF IMPLANTATION-INDUCED NON-STOICHIOMETRY ON THE EPITAXIAL RECRYSTALLIZATION OF CoSi2
Ridgway, M. C. ; Vantomme, A. ; Bavel, A.-M. Van ; Langouche, G.
Pub. info.: Silicides, germanides, and their interfaces : Symposium held November 29-December 2, 1993, Boston, Massachusetts, U.S.A..  pp.203-,  1994.  Pittsburgh, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 320
8.

Conference Proceedings
Conference Proceedings
8. Microstructural Studies of Co Silicide Layers Formed on SiGe and SiGeC
Jin, S. ; Bender, H. ; Donaton, R. A. ; Maex, K. ; Vantomme, A. ; Langouche, G. ; Amour, A. St. ; Sturm, J. C.
Pub. info.: Structure and evolution of surfaces : symposium held December 2-5, 1996, Boston, Massachusette, U.S.A..  pp.481-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 440
9.

Conference Proceedings
Conference Proceedings
9. Lattice Sites and Damage Annealing of Implanted Tm and Er in Si
Wahl, U. ; Correia, J. G. ; Wachter, J. De ; Langouche, G. ; Marques, J. G. ; Moons, R. ; Vantomme, A. ; the ISOLDE Collaboration
Pub. info.: Defects and diffusion in silicon processing : symposium held April 1-4, 1997, San Francisco, California, U.S.A..  pp.407-,  1997.  Pittsburg, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 469
10.

Conference Proceedings
Conference Proceedings
10. Growth of Co on Ag(100): A comparison of ultra low energy ion beam deposition and thermal deposition
Degroote, B. ; Dekoster, J. ; Degroote, S. ; Pattyn, H. ; Vantomme, A. ; Langouche, G. ; Hou, M.
Pub. info.: Fundamental mechanisms of low-energy-beam-modified surface growth and processing : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A..  pp.9-,  2000.  Warrendale, Pa..  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 585