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Conference Proceedings

1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C

Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1147-1152, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

2. Lattiee defects in Si1-xGex epitaxial diodes induced by 20-MeV alpha rays

Ohyama,H. ; Vanhellemont,J. ; Simoen,E. ; Claeys,C. ; Takami,Y. ; Hayama,K. ; Sunaga,H. ; Poortmans,J. ; Caymax,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.121-126, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

3. Irradiation induced lattice defects in In0.53Ga0.47As PIN photodiodes

Kudou,T. ; Ohyama,H. ; Vanhellemont,J. ; Simoen,E. ; Claeys,C. ; Takami,Y. ; Fujii,A. ; Sunaga,H.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part2 pp.1217-1222, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

4. Determination of stoichiometry and oxygen content in platelike and octahedral oxygen precipitates in silicon with FT-IT spectroscopy

Gryse,O.De ; Clauws,P. ; Vanhellemont,J. ; Claeys,C.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.405-410, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

5. On the Role of Point Defects in Gettering Processes

Vanhellemont,J. ; Claeys,C.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.171-176, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

Conference Proceedings

6. Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons

Kuriplach,J. ; Hoecke,T.van ; Waeyenberge,B.van ; Dauwe,C. ; Segers,D. ; Balcaen,N. ; Morales,A.L. ; Trauwaert,M.-A. ; Vanhellemont,J. ; Sob,M.

Pub. info.:	Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997. pp.605-607, 1997. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	255-257

Conference Proceedings

7. Defects in as-grown silicon and their evolution during beat treatments

Vanhellemont,J. ; Doruberger,E. ; Esfandyari,J. ; Kissinger,G. ; Trauwaert,M.-A. ; Bender,H. ; Graf,D. ; Lambert,U. ; Ammon,W.von

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.341-346, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

8. Irradiation Induced Lattice Defects in Si1-xGex Epitaxial Devices

Ohyama,H. ; Vanhellemont,J. ; Takami,Y. ; Hayama,K. ; Kudo,T. ; Hakata,T. ; Kobayashi,K. ; Sunaga,H. ; Poortmans,J. ; Caymax,M.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.371-376, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

Conference Proceedings

9. Lattice Defects in High Quality As-Grown CZ Silicon,Studied with Light Scattering and Preferential Etching Techniques

Vanhellemont,J. ; Kissinger,G. ; Graf,D. ; Kenis,K. ; Depas,M. ; Mertens,P. ; Lambert,U. ; Heyns,M. ; Claeys,C. ; Richter,H. ; Wagner,P.

Pub. info.:	Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995. pp.1755-1760, 1995. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	196-201

10.

Conference Proceedings

10. In-situ HVEM study of dopant dependent defect generation in silicon during I MeV electron irradiation

Romano-Rodriguez,A. ; Vanhellemont,J.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.303-308, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

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