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12 results

Conference Proceedings

1. FORMATION OF BURIED α- AND β-FeSi2 IN (100) Si BY HIGH DOSE ION IMPLANTATION

Maex, K. ; Lauwers, A. ; Van Hove, M. ; Vandervorst, W. ; Van Rossum, M.

Pub. info.:	Beam-solid interactions : fundamentals and applications : symposium held November 30-December 4, 1992, Boston, Massachusetts, U.S.A.. pp.869-874, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	279

Conference Proceedings

2. DAMAGE INTRODUCED BY CH4/H2 REACTIVE ION ETCHING IN PSEUDOMORPHIC AlGaAs/InGaAs MODFETs

Pereira, R. ; Van Hove, M. ; De Raedt, W. ; Van Hoof, C. ; Broghs, G. ; Van Rossum, M. ; Braspenning, R. H. ; Eijkemans, T. J. ; Van Es, C. M. ; Wolter, J. H.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.361-366, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

3. RAMAN SPECTROSCOPY STUDY OF DAMAGE IN n+ - GaAs INTRODUCED BY H2 AND CH4/H2 RIE

De Wolf, I. ; Van Hove, M. ; Pereira, R. -G. ; Van Rossum, M. ; Maes, H. E. ; Munder, H.

Pub. info.:	Advanced III-V compound semiconductor growth, processing and devices : symposium held Decmber[i.e. December] 2-5, 1991, Boston, Massachusetts, U.S.A.. pp.355-360, 1992. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	240

Conference Proceedings

4. InAsSb PHOTODIODES GROWN ON InAs, GaAs AND Si SUBSTRATES BY MOLECULAR BEAM EPITAXY

Dobbelaere, W. ; De Boeck, J. ; De Raedt, W. ; Vanhellemont, J. ; Zou, G. ; Van Hove, M. ; Brijs, B. ; Mertens, R. ; Borghs, G.

Pub. info.:	Long-wavelength semiconductor devices, materials, and processes : symposium held November 26-29, 1990, Boston, Massachusetts, U.S.A.. pp.181-186, 1991. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	216

Conference Proceedings

5. STUDY OF THE INFLUENCE OF STRUCTURAL PROPERTIES ON Si AND Be DOPING OF HETEROEPITAXIAL InAsSb ON GaAs-COATED Si SUBSTRATES FOR INFRARED PHOTODIODES

Boeck, De J. ; Dobbelaere, W. ; Van Hove, M. ; Vanhellemont, J. ; De Raedt, W. ; Vandervorst, W. ; Mertens, R. ; Borghs, G.

Pub. info.:	Epitaxial heterostructures : symposium held April 16-19, 1990, San Francisco, California, U.S.A.. pp.147-152, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	198

Conference Proceedings

6. CHARACTERIZATION OF PULSED LASER BEAM MIXED AuTe/GaAs OHMIC CONTACTS

Wuyts, K. ; Silverans, R.E. ; Van Hove, M. ; Van Rossum, M.

Pub. info.:	Beam-solid interactions : physical phenomena : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.413-418, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	157

Conference Proceedings

7. INFLUENCE OF STRUCTURAL AND ELECTRICAL CHARACTERISTICS OF EXTENDED DEFECTS ON GaAs FIELD EFFECT TRANSISTORS

Van Hove, M. ; De Raedt, W. ; De Potter, M. ; Van Rossum, M. ; Weyher, J. L.

Pub. info.:	Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A.. pp.457-462, 1988. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	104

Conference Proceedings

8. ON THE OHMIC CONTACT FORMATION MECHANISM IN THE Au/Te/n-GaAS SYSTEM

Wuyts, K. ; Langouche, G. ; Vanderstraeten, H. ; Silverans, R. E. ; Van Hove, M. ; Van Rossum, M. ; Munder, H. ; Luth, H.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.345-350, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

Conference Proceedings

9. lnP-Based HEMT Technology for MMIC Applications

Van Hove, M. ; Finders, J. ; van der Zanden, K. ; De Raedt, W. ; Van Rossum, M. ; Baeyens, Y. ; Schreurs, D. ; Nauwelaers, B. ; Zeng, A. ; Jackson, M.K.

Pub. info.:	Proceedings of the Symposium on Wide Bandgap Semiconductors and Devices and the Twenty-Third State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XXIII). pp.395-407, 1995. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	95-21

10.

Conference Proceedings

10. SUBMICRON PSEUDOMORPHIC HEMT’s USING NON-ALLOYED OHMIC CONTACTS WITH CONTRAST ENHANCEMENT

Jansen Ph. ; De raedt, W. ; Van Hove, M. ; Jonckhere, R. ; Pereira, R. ; Van Rossum, M.

Pub. info.:	Advanced metallizations in microelectronics : symposium held April 16-20, 1990, San Francisco, California, U.S.A.. pp.411-416, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	181

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