1.

Conference Proceedings
Conference Proceedings
1. Some Insights into the Relaxation Mechanisms of Germanium Growing on (001) Si by Ultrahigh Vacuum Chemical Vapor Deposition
D. Bouchier ; V. Yam ; M. Halbwax ; L. Nguyen ; D. Debarre
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.569-583,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
2.

Conference Proceedings
Conference Proceedings
2. Selective Epitaxial Growth Of Si And Relaxed Ge By UHV-CVD In Si(001) Windows
F. Fossard ; M. Halbwax ; V. Yam ; H. Nguyen ; V. Mathet
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.593-598,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)