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17 results

Conference Proceedings

1. OPTICAL DIRECT AND INDIRECT EXCITATION OF Er3+ IONS IN SILICON

Majima, A. ; Uekusa, S. ; Ootake, K. ; Abe, K. ; Kumagai, M.

Pub. info.:	Silicon-based optoelectronic materials : Symposium held April 12-14, 1993, San Francisco, California, U.S.A.. pp.435-440, 1993. Pittsburgh, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	298

Conference Proceedings

2. ELECTRICAL AND PHOTOLUMINESCENCE PROPERTIES OF Mg+ AND C+ IMPLANTED ACCEPTORS IN InP

Beye, A.C. ; Yamada, A. ; Shimizu, A. ; Shibata, H. ; Tanoue, H. ; Mayer, K.M. ; Sugiyama, H. ; Kamijoh, K. ; Oda, T. ; Arriga, O. ; Akiyama, I. ; Kutsuwada, N. ; Matsumori, T. ; Uekusa, S. ; Makita, Y.

Pub. info.:	Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A.. pp.139-144, 1990. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	163

Conference Proceedings

3. Photoluminescence Spectra from Acceptor-Doped GaAs and InP having Extremely Low Background Concentration of Donor Impurities: Formation of Novel Emissions

Yoshinaga, H. ; Makita, Y. ; Iida, T. ; Yamada, A. ; Winter, S. ; Kimura, S. ; Niki, S. ; Obara, A. ; Oda, O. ; Kainosho, K. ; Uekusa, S. ; Matsumori, T.

Pub. info.:	Proceedings of the Symposium on Logic and Functional Devices for Photonics and the seventeenth State-of-the-Art Program on Compound Semiconductors (SOTAPOCS XVII). pp.75-85, 1993. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1993-10

Conference Proceedings

4. Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method

Shibata, H. ; Kimura, S. ; Fons, P. ; Yamada, A. ; Makita, Y. ; Obara, A. ; Kobayashi, N. ; Takahashi, H. ; Katsumata, H. ; Tanabe, J. ; Uekusa, S.

Pub. info.:	Materials modification and synthesis by ion beam processing : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.393-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	438

Conference Proceedings

5. Effects of Carbon-Ion Irradiation-Energies on the Molecular Beam Epitaxy of GaAs and InGaAs

Makita, Y. ; Iida, T. ; Shima, T. ; Kimura, S. ; Obara, A. ; Harada, K. ; Tu, C. W. ; Uekusa, S. ; Matsumori, T. ; Kudo, K. ; Tanaka, K.

Pub. info.:	Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A.. pp.241-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	388

Conference Proceedings

6. Ion-Beam-Induced Epitaxy and Solid Phase Epitaxy of SiGeC on Si Formed by Ge and C Ion Implantation and Their Structural and Optical Properties

Kobayashi, N. ; Katsumata, H. ; Makita, Y. ; Hasegawa, M. ; Hayashi, N. ; Shibata, H. ; Uekusa, S. ; Hishita, S.

Pub. info.:	Film synthesis and growth using energetic beams : symposium held April 17-20, 1995, San Francisco, California, U.S.A.. pp.189-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	388

Conference Proceedings

7. Optical activity of Yb3+in MeV ion-implanted InP

Uekusa, S. ; Majima, A. ; Katsumata, H. ; Noyori, Y. ; Kumagai, M.

Pub. info.:	Rare earth doped semiconductors : symposium held April 13-15, 1993, San Francisco, California, U.S.A.. pp.201-, 1993. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	301

Conference Proceedings

8. Influence of Oxygen on Er-Related Emission in GaN With a Large Yellow Band

Uekusa, S. ; Goto, T. ; Kumagai, M.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.163-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

9. Growth of Ge1-xCx Alloys on Si by Combined Low-Energy Ion-Beam and Molecular-Beam-Epitaxy Method

Shibata, H. ; Kimura, S. ; Fons, P. ; Yamada, A. ; Makita, Y. ; Obara, A. ; Kobayashi, N. ; Takahashi, H. ; Katsumata, H. ; Tanabe, J. ; Uekusa, S.

Pub. info.:	Microstructure evolution during irradiation : symposium held December 2-5, 1996, Boston, Massachusetts, U.S.A.. pp.233-, 1997. Pittsburgh, Pa.. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	439

10.

Conference Proceedings

10. Er-Related Emission in Impurities (Nitrogen, Oxygen) Implanted Al0.7 Ga0.3As

Uekusa, S. ; Wakutani, M. ; Saito, M. ; Kumagai, M.

Pub. info.:	Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.595-, 1998. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	484

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