1.

Conference Proceedings
Conference Proceedings
1. Thickness Scaling of Gate Dielectric on Plasma Charging Damage in MOS Devices
Chang-Liao, K.-S. ; Tzeng, P.-J.
Pub. info.: Plasma processing XIV : proceedings of the international symposium.  pp.170-178,  2002.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-17
2.

Conference Proceedings
Conference Proceedings
2. Suppression of Plasma Charging Damage in Sub Micron Metal-Oxide-Scmiconductor Field-Effect Transistors (MOSFETS) with Gate Oxynitride by Two-Step Nitridation
Tzeng, P.-J. ; Wu, B.-F. ; Chang-Liao, K.-S.
Pub. info.: Thin film materials, processes, and reliability : proceedings of the international symposium.  pp.8-13,  2001.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2001-24