1.

Conference Proceedings
Conference Proceedings
1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C
Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1147-1152,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons
Kuriplach,J. ; Hoecke,T.van ; Waeyenberge,B.van ; Dauwe,C. ; Segers,D. ; Balcaen,N. ; Morales,A.L. ; Trauwaert,M.-A. ; Vanhellemont,J. ; Sob,M.
Pub. info.: Positron annihilation, ICPA-11 : Proceedings of the 11th International Conference on Positron Annihilation, Kansas City, Missouri, USA, May 1997.  pp.605-607,  1997.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 255-257
3.

Conference Proceedings
Conference Proceedings
3. Defects in as-grown silicon and their evolution during beat treatments
Vanhellemont,J. ; Doruberger,E. ; Esfandyari,J. ; Kissinger,G. ; Trauwaert,M.-A. ; Bender,H. ; Graf,D. ; Lambert,U. ; Ammon,W.von
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part1  pp.341-346,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263