1.

Conference Proceedings
Conference Proceedings
1. 33 Advanced layer-by-layer deposition and annealing process for high-quality high-k dielectrics formation
Iwamoto, K. ; Fominaga, F. ; Yasuda, F. ; Nabatame, T. ; Toriumi, A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.265-280,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. Validity of Generated Subordinate Carrier Injection Model in Al Profiled HfAlON Dielectrics (Invited paper)
Satake, H. ; Ota, H. ; Okada, K. ; Nabatame, T. ; Toriumi, A.
Pub. info.: ULSI Process Integration : proceedings of the International Symposium.  pp.133-142,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-06
3.

Conference Proceedings
Conference Proceedings
3. *The boundary between hard- and soft-breakdown in ultrathin silicon dioxide films
Toriumi, A. ; Satake, H.
Pub. info.: Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.323-,  2000.  Warrendale, PA.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 592
4.

Conference Proceedings
Conference Proceedings
4. Semiconducting Properties of Pentacene Thin Films Studied by Complex Impedance, Surface Mobility and Photo-induced Effects Invited Paper
Toriumi, A. ; Yokoyama, T. ; Nishimura, T. ; Yamada, T. ; Kita, K. ; Kyuno, K.
Pub. info.: Thin Film Transistor Technologies (TFTT VII) : proceedings of the international symposium.  pp.237-248,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-15
5.

Conference Proceedings
Conference Proceedings
5. Negative Bias Temperature Instability in Ultra-Thin SiON
Mitani, Y. ; Satake, H. ; Toriumi, A.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.340-352,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01
6.

Conference Proceedings
Conference Proceedings
6. Far- and Mid-Infrared Absorption Study of HfO2/SiO2/Si System
Toriumi, A. ; Tomida, K. ; Shimizu, H. ; Kita, K. ; Kyuno, K.
Pub. info.: Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium.  pp.471-481,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-01
7.

Conference Proceedings
Conference Proceedings
7. Flat-Band Voltage Shift of MOS Capacitors With Tantalum Nitride Gate Electrodes Induced by Post Metallization Annealing
Kadoshima, M. ; Yamamoto, K. ; Fujiwara, H. ; Akiyama, K. ; Tominaga, K. ; Yamagishi, N. ; Iwamoto, K. ; Ohno, M. ; Yasuda, T. ; Nabatame, T. ; Toriumi, A.
Pub. info.: Fundamentals of novel oxide/semiconductor interfaces : symposium held December 1-4, 2003, Boston, Massachusetts, U.S.A..  pp.279-284,  2004.  Warrendale, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 786
8.

Conference Proceedings
Conference Proceedings
8. Low-Frequency Noise Characterization in HfAlO x/SiO2 n-MOSFETs
Horikawa, T. ; Yasuda, N. ; Mizubayashi, W. ; Iwamoto, K. ; Tominaga, K. ; Akiyama, K. ; Yamamoto, K. ; Hisamatsu, H. ; Ota, H. ; Nabatame, T. ; Toriumi, A.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.292-303,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-01
9.

Conference Proceedings
Conference Proceedings
9. Study of Soft Breakdown in Thin Si02 Films by Carrier-Separation Technique and Breakdown-Transient Modulation
Toriumi, A. ; Takagi, S. ; Satake, H.
Pub. info.: The physics and chemistry of SiO2 and the Si-SiO2 interface-4, 2000 : proceedings of the fourth International Symposium on the Physics and Chemistry of SiO2 and the Si-SiO2 Interface, Tronto, Canada, May 15-18, 2000.  pp.399-408,  2000.  Pennington, N.J..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-2