1.

Conference Proceedings
Conference Proceedings
1. SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL
Nakamura, K. ; Saishoji, T. ; Tomioka, J.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.554-566,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
2.

Conference Proceedings
Conference Proceedings
2. Diffusion Model of Point Defects in Silicon Crystals During Melt-Growth
Nakamura, K. ; Saishoji, T. ; Tomioka, J.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.41-54,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
3.

Conference Proceedings
Conference Proceedings
3. Formation Behaviour of Grown-in Defects in Silicon During Czochralski Crystal Growth
Saishoji, T. ; Nakamura, K. ; Nakajima, H. ; Yokoyama, T. ; Ishikawa, F. ; Tomioka, J.
Pub. info.: Proceedings of the Fifth International Symposium on High Purity Silicon V.  pp.28-40,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-13
4.

Conference Proceedings
Conference Proceedings
4. The Formation Mechanism of Coupled Voids in Czochralski Silicon
Ishikawa, F. ; Sadohara, S. ; Saishoji, T. ; Nakamura, K. ; Tomioka, J.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.86-96,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
5.

Conference Proceedings
Conference Proceedings
5. Effect of Shape of Crystal-Melt Interface on Point Defect Reaction in Silicon Crystals
Nakamura, K. ; Maeda, S. ; Togawa, S. ; Saishoji, T. ; Tomioka, J.
Pub. info.: High Purity Silicon VI : proceedings of the sixth International Symposium.  pp.31-43,  2000.  Bellingham, Wash..  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2000-17
6.

Conference Proceedings
Conference Proceedings
6. SIMULATION OF THE POINT DEFECT DIFFUSIONAND GROWTH CONDITION FOR DEFECT FREE CZ SILICON CRYSTAL
Nakamura, K. ; Saishoji, T. ; Tomioka, J.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.554-566,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
7.

Technical Paper
Technical Paper
7. Influence of Environmental Temperature on the Fatigue Strength of Type 3 Compressed-Hydrogen Tanks.
Tomioka, J. ; Tamura, Y. ; Mitsuishi, H. ; Watanabe, S.
Pub. info.: 2009 SAE world congress : technical paper.  2009.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2009
8.

Technical Paper
Technical Paper
8. An Experimental Study on the Fire Response of Vehicles with Compressed Hydrogen Cylinders.
Tamura, Y. ; Takabayashi, M. ; Tomioka, J. ; Suzuki, J. ; Sato, K.
Pub. info.: 2010 SAE world congress : technical paper.  2010.  Warrendale, Penn..  Society of Automotive Engineers
Title of ser.: Society of Automotive Engineers technical paper series
Ser. no.: 2010