1.

Conference Proceedings
Conference Proceedings
1. 44. Poly-Si gate CMOS with hafnium silicate gate dielectric
Hobbs, C. ; Grant, J. ; Kher, S. ; Dhandapani, V. ; Taylor, B. ; Dip, L. ; Hegde, R. ; Metzner, C. ; Tseng, H. ; Gilmer, D. ; Franke, A. ; Garcia, R. ; Ilebert, L. ; Azrak, M. ; Sing, D. ; Stephens, J.K ; Scrogum, C. ; Rai, R. ; Becnel, V ; Conner, I ; White, B. ; Tobin, P.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.361-366,  2003.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2003-14
2.

Conference Proceedings
Conference Proceedings
2. 31 New Materials, Processes and Device Structures for 65nm CMOS Technology Node and Beyond
Nguyen, B.-Y. ; Them, A. ; Zhang, D. ; White, T. ; Sadaka, M. ; Triyoso, D. ; Schaeffer, J. ; Goolsby, B. ; Dhandapani, V. ; Nguyen, T. ; Vartanian, V. ; McCormick, L. ; Theodore, D. ; Zollner, S. ; Xie, Q. ; Wang, X.-D. ; Canonico, M. ; Kotte, M. ; Shi, Z. ; Mathew, L. ; Zavala, M. ; Parker, C. ; Cottard, H. ; Hildreth, J. ; Prabhu, L. ; Rai, R. ; Murphy, S. ; Montgomery, P. ; Kalpat, S. ; Ramon, M. ; Demkov, A. ; Taylor, B. ; Gilmer, D. ; Adams, V. ; Jiang, J. ; Chen, J. ; Chang, C.-H. ; Kaushik, V. ; Chandna, L. ; Sadd, M. ; Barr, A. ; Vandooren, A. ; Pham, D. ; Mendlcino, M. ; Cheek, J. ; Tseng, H. ; White, B. ; Tobin, P. ; Orlowski, M. ; Venkatesan, S. ; Mogab, J. (Invited Paper)
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium.  pp.259-273,  2005.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2005-05
3.

Conference Proceedings
Conference Proceedings
3. REMOVAL OF Fe AND Al BY PYROCHEMICAL CLEANING
Limb, Y. ; Nguyen, B.Y. ; Tobin, P.
Pub. info.: Proceedings of the Third International Symposium on Cleaning Technology in Semiconductor Device Manufacturing.  pp.409-415,  1994.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 1994-7
4.

Conference Proceedings
Conference Proceedings
4. Tantalum Pentoxide Gate Dielectrics Formed by Tantalum Oxidation
Hobbs, C. ; Hegde, R. ; Maiti, B. ; Nagabushnam, R. ; La, L. ; Reid, K. ; Dip, A. ; Grove, L. ; Conner, J. ; Kaushik, V. ; Prabhu, L. ; Anderson, A. ; Bagchi, S. ; Mendonca, J. ; Tobin, P.
Pub. info.: Ultrathin SiO[2] and high-K materials for USLI gate dielectrics : symposium held April 5-8, 1999, in San Francisco, California, U.S.A..  pp.379-,  1999.  Warrendale, PA.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 567
5.

Conference Proceedings
Conference Proceedings
5. Low-Temperature Remote-Plasma-Assisted Jet Vapor Deposition of Silicon Nitride
Veteran, J. ; Hobbs, C. ; Hegde, R. ; Tobin, P. ; Wang, V. ; Tseng, H. ; Kenig, G. ; Hartig, M. ; Tamagawa, T. ; Doran, R. ; Makowicz, P. ; Schmitt, J. ; Halpern, B. ; Zhang, J. Z.
Pub. info.: Chemical aspects of electronic ceramics processing : symposium held November 30-December 4, 1997, Boston, Massachusetts, U.S.A..  pp.445-,  1998.  Warrendale, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 495
6.

Conference Proceedings
Conference Proceedings
6. High density plasma etching of Ta2O5-selectivity to Si and effect of UV light enhancememt
Lee, K. P. ; Cho, H. ; Singh, R. K. ; Pearton, S. J. ; Hobbs, C. ; Tobin, P.
Pub. info.: Chemical processing of dielectrics, insulators and electronic ceramics : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A..  pp.257-,  2000.  Warrendale.  MRS-Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 606
7.

Conference Proceedings
Conference Proceedings
7. INTRODUCTORY REMARKS - PROCESS INTEGRATION
Tobin, P. ; Deleonibus, S.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.707-710,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2
8.

Conference Proceedings
Conference Proceedings
8. Factors Influencing the Threshold Voltages of Metal Oxide CMOS Devices
Hobbs, C. ; Fonseca, L. ; Samavedam, S. ; Grant, J. ; Dhandapani, V. ; Taylor, B. ; Dip, L. ; Triyoso, D. ; Gilmer, D. ; Schaeffer, J. ; Hegde, R. ; Tseng, H ; White, B. ; Tobin, P.
Pub. info.: Advanced short-time thermal processing for Si-based CMOS devices : proceedings of the international symposium.  pp.313-320,  2004.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2004-01
9.

Conference Proceedings
Conference Proceedings
9. INTRODUCTORY REMARKS - PROCESS INTEGRATION
Tobin, P. ; Deleonibus, S.
Pub. info.: Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology.  pp.707-710,  2002.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 2002-2