1.

Conference Proceedings
Conference Proceedings
1. High Performance Silicon Wafer with Wide Grown-in Void Free Zone and High Density Internal Gettering Site Achieved via Rapid Crystal Growth with Nitrogen Doping and High Temperature Hydrogen and/or Argon Annealing
Tamatsuka, M. ; Kobayashi, N. ; Tobe, S. ; Masui, T.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.456-467,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
2.

Conference Proceedings
Conference Proceedings
2. DIRECT OBSERVATION OF MEDIUM FIELD BREAKDOWN ORIGIN ON MOS CAPACITORS CONTAINING GROWN-IN CZ CRYSTAL DEFECTS
Tamatsuka, M. ; Radzimski, Z. ; Rozgonyi, G.A. ; Oka, S. ; Kato, M. ; Kitagawara, Y.
Pub. info.: Silicon materials science and technology : proceedings of the Eighth International Symposium on Silicon Materials Science and Technology.  pp.1593-1609,  1998.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 98-1(2)
3.

Conference Proceedings
Conference Proceedings
3. Effect of Al or Poly-Si Gate Electrodes and Oxide Thickness on Gate Oxide Integrity and Leakage Site Observations
Tamatsuka, M. ; Kimura, M. ; Oka, S. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Fourth International Symposium on High Purity Silicon.  pp.345-356,  1996.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 96-13
4.

Conference Proceedings
Conference Proceedings
4. Effects of Light Element Impurities on the Formation of Grown-in Defects Free Region of Czochralski Silicon Single Crystal
lida, M. ; Kusaki, W. ; Tamatsuka, M. ; lino, E. ; Kimura, M. ; Muraoka, S.
Pub. info.: Proceedings of the Third International Symposium on Defects in Silicon.  pp.499-510,  1999.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 99-1
5.

Conference Proceedings
Conference Proceedings
5. Oxide Defects Annihilation/Generation by High-Temperature Annealing: A Gate Oxide Integrity Evaluation
Tamatsuka, M. ; Sasaki, T. ; Hagimoto, K. ; Rozgonyi, G.A.
Pub. info.: ULSI science and technology, 1997 : proceedings of the Sixth International Symposium on Ultralarge Scale Integration Science and Technology.  pp.183-196,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-3
6.

Conference Proceedings
Conference Proceedings
6. Crystal originated particles (COPs), bulk defects including the OSF ring, gate oxide integrity (GOI), and DRAM yield
Rozgonyi, G. ; Tamatsuka, M. ; Bae, K.-M. ; Gonzales, F.
Pub. info.: Proceedings of the Symposium on Crystalline Defects and Contamination, their Impact and Control in Device Manufacturing II.  pp.153-172,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-22
7.

Conference Proceedings
Conference Proceedings
7. Novel GOI Failure Analysis Using SEM/MOS/EBIC with SubNano Ampere Current Breakdown
Tamatsuka, M. ; Oka, S. ; Kirk, H.R. ; Rozgonyi, G.A.
Pub. info.: Proceedings of the Electrochemical Society Symposium on Diagnostic Techniques for Semiconductor Materials and Devices.  pp.80-91,  1997.  Pennington, NJ.  Electrochemical Society
Title of ser.: Electrochemical Society Proceedings Series
Ser. no.: 97-12