1.

Conference Proceedings
Conference Proceedings
1. Switching Characteristics of SiC-MOSFET and SBD Power Modules
Imaizumi, M. ; Tarui, Y. ; Kinouchi, S. ; Nakatake, H. ; Nakao, Y. ; Watanabe, T. ; Fujihira, K. ; Miura, N. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1289-1292,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
2.

Conference Proceedings
Conference Proceedings
2. Fabrication and Performance of 1.2 kV, 12.9 mΩcm2 4H-SiC Epilayer Channel MOSFET
Tarui, Y. ; Watanabe, T. ; Fujihira, K. ; Miura, N. ; Nakao, Y. ; Imaizumi, M. ; Sumitani, H. ; Takami, T. ; Ozeki, T. ; Oomori, T.
Pub. info.: Silicon carbide and related materials - 2005 : proceedings of the International Conference on Silicon Carbide and Related Materials - 2005 : Pittsburgh, Pennsylvania, USA : September 18-23 2005.  pp.1285-1288,  2006.  Stafa-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 527-529
3.

Conference Proceedings
Conference Proceedings
3. Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
Ohtsuka, K. ; Sugimoto, H. ; Kinouchi, S. ; Tarui, Y. ; Imaizumi, M. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1165-1168,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Planar p-n Diodes Fabricated by MeV-Energy and High-Temperature Selective Implantation of Aluminum to 4H-SiC
Sugimoto, H. ; Kinouchi, S. ; Tarui, Y. ; Imaizumi, M. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000.  pp.731-734,  2001.  Uetikon-Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 353-356
5.

Conference Proceedings
Conference Proceedings
5. Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1203-1206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
6.

Conference Proceedings
Conference Proceedings
6. Effects of N2O Anneal on Channel Mobility of 4H-SiC MOSFET and Gate Oxide Reliability
Fujihira, K. ; Tarui, Y. ; Ohtsuka, K. I. ; Imaizumi, M. ; Takami, T.
Pub. info.: Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy.  pp.697-700,  2005.  Uetikon-Zuerich.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 483-485
7.

Conference Proceedings
Conference Proceedings
7. Reactive Ion Etching in CF4/O2 Gas Mixtures for Fabricating SiC Devices
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Tanimura, J. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999.  pp.1057-1060,  2000.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 338-342(2)
8.

Conference Proceedings
Conference Proceedings
8. Influence of Depletion Region Length on Specific On-Resistance in SiC MOSFET
Ohtsuka, K. ; Tarui, Y. ; Imaizumi, M. ; Sugimoto, H. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.765-768,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436
9.

Conference Proceedings
Conference Proceedings
9. Minimization of Electric Field Enhancement at Electrode Edge by Surface High Resistive Layer in Ti/4H-SiC Schottky Barrier Diode
Ohtsuka, K. ; Sugimoto, H. ; Kinouchi, S.I. ; Tarui, Y. ; Imaizumi, M. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1165-1168,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
10.

Conference Proceedings
Conference Proceedings
10. Fabrication and Initial Characterization of 4H-SiC Epilayer Channel MOSFETs
Imaizumi, M. ; Tarui, Y. ; Sugimoto, H. ; Ohtsuka, K. ; Takami, T. ; Ozeki, T.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.1203-1206,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393