1.

Conference Proceedings
Conference Proceedings
1. What is the Essence of VFB Shifts in High-κ Gate Stack?
T. Nabatame ; K. Iwamoto ; K. Akiyama ; Y. Nunoshige ; H. Ota
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.543-555,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. Application of Advanced Atomic Layer Deposition for Understanding and Control of VTH and EOT in Metal/High-κ Gate Stacks
A. Toriumi ; T. Nabatame ; H. Ota
Pub. info.: Atomic layer deposition applications 4.  pp.69-75,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(4)
3.

Conference Proceedings
Conference Proceedings
3. Roles of Predominant and Subordinate Carriers in Breakdown Mechanism of High-k Gate Dielectrics Studied with HfAlOx/SiO₂ Stacks
K. Okada ; H. Ota ; A. Ogawa ; W. Mizubayashi ; T. Horikawa ; H. Satake ; T. Nabatame ; A. Toriumi
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.179-190,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
4.

Conference Proceedings
Conference Proceedings
4. Dielectric Evolution Characteristics of HhCN Metal Electrode Gated MOS Stacks
W. Wang ; T. Nabatame ; Y. Shimogaki
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.529-540,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
5.

Conference Proceedings
Conference Proceedings
5. Accurate TDDB Lifetime Prediction of High-k Stacked Gate Dielectrics with Regarding High Density Initial Traps
K. Okada ; H. Ota ; T. Nabatame ; A. Toriumi
Pub. info.: Silicon nitride, silicon dioxide, and emerging dielectrics 9.  pp.671-686,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(3)
6.

Conference Proceedings
Conference Proceedings
6. Significance of Nitrogen and Aluminum Depth Profile Control in HfAlON Gate Insulators
H. Ota ; A. Ogowa ; M. Kadoshima ; K. Iwamoto ; K. Okada ; H. Satake ; T. Nabatame ; A. Toriumi
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.41-48,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
7.

Conference Proceedings
Conference Proceedings
7. Thermal Robustness of VFB and EOT in HfOx(N) p-MOS Devices with Partially Silicided Pt Gate Electrodes
M. Kadoshima ; T. Nabatame ; M. Takahashi ; A. Ogawa ; K. Iwamoto ; W. Mizubasyashi ; H. Ota ; H. Satake ; A. Toriumi
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.287-294,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)