1.

Conference Proceedings
Conference Proceedings
1. High Performance, Ultra-thin, Strained-Ge, Heterostructure FETs With High Mobility And Low Leakage
T. Krishnamohan ; D. Kim ; Y. Nishi ; K. Saraswat ; C. Jungemann
Pub. info.: SiGe and Ge, materials, processing, and devices.  pp.687-695,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(7)
2.

Conference Proceedings
Conference Proceedings
2. Mobilty Modeling of Strained Germanium (s-Ge) Quantum Well (QW) Heterostructure pMOSFETs
T. Krishnamohan ; A. Pham ; C. Jungemann ; B. Meinerzhagen ; K. Saraswat
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.397-403,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
3.

Conference Proceedings
Conference Proceedings
3. Performance Limitations of Si Bulk CMOS and Alternatives for future ULSI
K.C. Saraswat ; D. Kim ; T. Krishnamohan ; A. Pethe
Pub. info.: 2007 International Conference on Semiconductor Technology for Ultra Large Scale Integrated Circuits and Thin Film Transistors (ULSIC vs. TFT).  pp.9-14,  2007.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 8(1)
4.

Conference Proceedings
Conference Proceedings
4. Ge Interface Passivation Techniques and Their Thermal Stability
D. Kuzum ; T. Krishnamohan ; A. Pethe ; Y. Oshima ; Y. Sun
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.1025-1029,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
5.

Conference Proceedings
Conference Proceedings
5. Performance Evaluation of 15nm Gate Length Double-Gate n-MOSFETs with High Mobility Channels: III-V, Ge and Si
D. Kim ; T. Krishnamohan ; K. Saraswat
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.47-55,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)
6.

Conference Proceedings
Conference Proceedings
6. Germanium for High Performance MOSFETs and Optical Interconnects
K. Saraswat ; D. Kim ; T. Krishnamohan ; D. Kuzum ; A.K. Okyay
Pub. info.: SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices.  pp.3-12,  2008.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 16(10)