1.

Conference Proceedings
Conference Proceedings
1. Low Resistance Ohmic Contact Formation on 4H-SiC C-Face with NbNi Silicidation Using Nanosecond Laser Annealing
M. de Silva ; S. Ishikawa ; T. Kikkawa ; S.I. Kuroki
Pub. info.: Silicon Carbide and Related Materials 2015 : [ICSCRM 2015] : selected, peer reviewed papers from the 16th International Conference on Silicon Carbide and Related Materials, October 4-9, 2015, Giardini Naxos, Italy.  pp.549-552,  2016.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 858
2.

Conference Proceedings
Conference Proceedings
2. Influence of Negative Charging on High Rate SiC Etching for GaN HEMT MMICs
N. Okamoto ; K. Imanishi ; T. Kikkawa ; N. Nara
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.791-794,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
3.

Conference Proceedings
Conference Proceedings
3. Low Resistance Ohmic Contact Formation of Ni Silicide on Partially Si Ion Implanted n+ 4H-SiC
M. de Silva ; T. Sato ; S.I. Kuroki ; T. Kikkawa
Pub. info.: Silicon carbide and related materials 2013 : selected, peer reviewed papers from the 15th International Conference on Silicon Carbide and Related Materials (ICSCRM 2013), September 29 - October 4, 2013, Miyazaki, Japan.  pp.689-692,  2014.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 778-780
4.

Conference Proceedings
Conference Proceedings
4. Electromigration characteristics for Al-Ge-Cu
K. Kikuta ; T. Kikkawa
Pub. info.: Microelectronics manufacturability, yield, and reliability : 20-21 October 1994, Austin, Texas.  pp.4-13,  1994.  Bellingham, WA.  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 2334
5.

Conference Proceedings
Conference Proceedings
5. Low Resistance Ti-Si-C Ohmic Contacts for 4H-SiC Power Devices Using Laser Annealing
M. de Silva ; T. Kawasaki ; T. Kikkawa ; S.I. Kuroki
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.399-402,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
6.

Conference Proceedings
Conference Proceedings
6. Enhanced-Oxidation and Interface Modification on 4H-SiC(0001) Substrate Using Alkaline Earth Metal
K. Muraoka ; H. Sezaki ; S. Ishikawa ; T. Maeda ; T. Sato ; T. Kikkawa ; S.I. Kuroki
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.348-351,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
7.

Conference Proceedings
Conference Proceedings
7. 4H-SiC Pseudo-CMOS Logic Inverters for Harsh Environment Electronics
S.I. Kuroki ; T. Kurose ; H. Nagatsuma ; S. Ishikawa ; T. Maeda ; H. Sezaki ; T. Kikkawa ; T. Makino ; T. Ohshima ; M. Östling ; C.M. Zetterling
Pub. info.: Silicon Carbide and Related Materials 2016.  pp.669-672,  2017.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 897
8.

Conference Proceedings
Conference Proceedings
8. Recent progress of GaN electronic devices for wireless communication system
T. Kikkawa ; K. Imanishi ; N. Nara ; H. Shigematsu ; K. Joshin
Pub. info.: Gallium nitride materials and devices III : 21-24 January 2008, San Jose, California, USA.  pp.68941Q-1-68941Q-12,  2008.  Bellingham, Wash..  Society of Photo-optical Instrumentation Engineers
Title of ser.: Proceedings of SPIE - the International Society for Optical Engineering
Ser. no.: 6894