1.

Conference Proceedings
Conference Proceedings
1. High Performance Gate-First pMISFET with TiN/HfSiON Gate Stacks Fabricated with PVD-Based In-Situ Method
T. Kawahara ; Y. Nishida ; S. Sakashita ; J. Yugami ; N. Kitano
Pub. info.: Physics and technology of high-k gate dielectrics 5.  pp.585-599,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 11(4)
2.

Conference Proceedings
Conference Proceedings
2. High Quality 3C-SiC Substrate for MOSFET Fabrication
H. Nagasawa ; T. Kawahara ; K. Yagi ; N. Hatta ; H. Uchida
Pub. info.: HeteroSiC & WASMPE 2011 : selected, peer reviewed papers from the 4th Workshop on Advanced Semiconductor Materials and Devices for Power Electronics Applications (HeteroSiC & WASMPE 2011), June 27-30, 2011, Tours, France.  pp.91-98,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 711
3.

Conference Proceedings
Conference Proceedings
3. Reliable Method for Eliminating Stacking Fault on 3C-SiC(001)
N. Hatta ; T. Kawahara ; K. Yagi ; H. Nagasawa ; S.A. Reshanov
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.173-176,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Propagation of Stacking Faults in 3C-SiC
H. Nagasawa ; T. Kawahara ; K. Yagi ; N. Hatta
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.282-285,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680
5.

Conference Proceedings
Conference Proceedings
5. Characterization of Charge Trapping and Dielectric Breakdown of HfAlOx/SiON Dielectric Gate Stack
Y. Pei ; S. Nagamachi ; H. Murakami ; S. Higashi ; S. Miyazaki ; T. Kawahara ; K. Torii ; Y. Nara
Pub. info.: Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5.  pp.163-172,  2005.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(1)
6.

Conference Proceedings
Conference Proceedings
6. Challenges for Improving the Crystal Quality of 3C-SiC Verified with MOSFET Performance
H. Nagasawa ; K. Yagi ; T. Kawahara ; N. Hatta ; M. Abe
Pub. info.: Silicon carbide and related materials 2007 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2007, Otsu Prince Hotel Covention Hall, Lake Biwa Resort, Otsu, Japan, October 14-19, 2007.  pp.89-94,  2009.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 600-603
7.

Conference Proceedings
Conference Proceedings
7. Correlation between Leakage Current and Stacking Fault Density of p-n Diodes Fabricated on 3C-SiC
T. Kawahara ; N. Hatta ; K. Yagi ; H. Uchida ; M. Kobayashi
Pub. info.: Silicon carbide and related materials 2009 : selected peer reviewed papers from the International Conference on Silicon Carbide and Related Materials 2009, Nurnberg, Germany, October 11-16, 2009.  pp.339-342,  2010.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 645-648
8.

Technical Paper
Technical Paper
8. Precision Attitude Determination for the Advanced Land Observing Satellite (ALOS): Design, Verification, and On-Orbit Calibration
T. Iwata ; H. Hoshino ; T. Yoshizawa ; T. Kawahara
Pub. info.: AIAA meeting papers on disc.  2007.  Reston, Va..  American Institute of Aeronautics and Astronautics
Title of ser.: AIAA Paper : AIAA Guidance Navigation and Control Conference
Ser. no.: 2007