1.

Conference Proceedings
Conference Proceedings
1. Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
H. Fujiwara ; A. Onogi ; T. Katsuno ; T. Morino ; T. Endo
Pub. info.: Silicon Carbide and Related Materials 2014 : Selected peer reviewed papers from the European Conference on Silicon Carbide & Related Materials (ECSCRM 2014), September 21-25, 2014, Grenoble, France.  pp.567-570,  2015.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 821-823
2.

Conference Proceedings
Conference Proceedings
2. Surface Morphology of Leakage Current Sources of 4H-SiC Schottky Barrier Diodes by Atomic Force Microscope
T. Katsuno ; Y. Watanabe ; T. Ishikawa ; H. Fujiwara ; M. Konishi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.375-378,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
3.

Conference Proceedings
Conference Proceedings
3. Critical Density of Nanoscale Pits for Suppressing Variability in Leakage Current of a SiC Schottky Barrier Diode
T. Ishikawa ; T. Katsuno ; Y. Watanabe ; H. Fujiwara ; T. Endo
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.371-374,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
4.

Conference Proceedings
Conference Proceedings
4. Impact of Surface Morphology above Threading Dislocations on Leakage Current in 4H-SiC Diodes
F. Hirokazu ; T. Katsuno ; T. Ishikawa ; H. Naruoka ; M. Konishi
Pub. info.: Silicon carbide and related materials 2011 : selected, peer reviewed papers from the 14th International Conference on Silicon Carbide and Related Materials 2011 (ICSCRM 2011), September 11-16, 2011, Cleveland, Ohio, USA.  pp.911-916,  2012.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 717-720
5.

Conference Proceedings
Conference Proceedings
5. New Separation Method of Threading Dislocations in 4H-SiC Epitaxial Layer by Molten KOH Etching
T. Katsuno ; Y. Watanabe ; H. Fujiwara ; M. Konishi ; T. Yamamoto
Pub. info.: Silicon Carbide and Related Materials 2010 : Selected, peer reviewed papers from the 8th European Conference on Silicon Carbide and Related Materials (ECSCRM 2010), held in Oslo (Sundvolden Conference Centre), Norway, August 29th - September 2nd.  pp.298-301,  2011.  Aedermannsdorf, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 679-680