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12 results

Conference Proceedings

1. Electrical Passivation of the (100)Ge Surface by Its Thermal Oxide

F. Bellenger ; M. Houssa ; A. Delabie ; T. Conard ; M. Caymax

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.451-459, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

2. Atomic Layer Deposition of Hafnium Based Gate Dielectric Layers for CMOS Applications

A. Delabie ; L. Nyns ; F. Bellenger ; M. Caymax ; T. Conard

Pub. info.:	Atomic layer deposition applications 3. pp.227-241, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(7)

Conference Proceedings

3. Physical Characterization of the Metal/High-κ Layer Interaction upon Annealing

T. Conard ; A. Franquet ; W. Vandervorst ; M. Reading ; J. Van den Berg

Pub. info.:	Physics and technology of high-k gate dielectrics 6. pp.433-442, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(5)

Conference Proceedings

4. A Novel Concept for Contact Etch Residue Removal

I.J. Vos ; D. Hellin ; S. Demuynck ; O. Richard ; T. Conard

Pub. info.:	Cleaning and surface conditioning technology in semiconductor device manufacturing 10. pp.403-407, 2007. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(2)

Conference Proceedings

5. Vapor Phase Doping with N-type Dopant into Silicon by Atmospheric Pressure Chemical Vapor Deposition

S. Takeuchi ; N. Nguyen ; F.E. Leys ; R. Loo ; T. Conard

Pub. info.:	SiGe, Ge, and Related Compounds 3: Materials, Processing, and Devices. pp.495-502, 2008. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	16(10)

Conference Proceedings

6. Ultra Low-k Materials Based on Self-Assembled Organic Polymers

M. Pantouvaki ; L. Zhao ; C. Huffman ; K. Vanstreels ; I. Ciofi ; G. Vereecke ; T. Conard ; Y. Ono ; M. Nakajima ; K. Nakatani ; G. P. Beyer ; M. R. Baklanov

Pub. info.:	Materials, processes, and reliability for advanced interconnects for micro- and nanoelectronics--2011 : symposium held April 25-29, 2011, San Francisco, California, U.S.A.. pp.3-14, 2012. Warrendale, PA. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	1335

Conference Proceedings

7. Screening of High-κ Layers in MIS and MIM Capacitors Using Aqueous Chemical Solution Deposition

S. Van Elshocht ; A. Hardy ; C. Adelmann ; M. Caymax ; T. Conard

Pub. info.:	Physics and technology of high-k gate dielectrics 5. pp.299-310, 2007. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	11(4)

Conference Proceedings

8. Growth Studies and Reaction Mechanism of the Atomic Layer Deposition of Hafnium Oxide

A. Debbie ; M. Caymax ; S. Brijs ; D. Brunco ; T. Conard ; E. Sleeckx ; L. Ragnarsson ; S. Van Elshocht ; S. De Gendt ; M. Heyns

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.433-446, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

Conference Proceedings

9. Wet Etch Characteristics of Hafnium Silicate Layers

M. Claes ; V. Paraschiv ; D. Dictus ; T. Conard ; W. Boullari ; S. Vanhaelemeersch ; S. De Gendt ; A. Delabie ; S. Van Elshoclst ; C. Zhao ; J. Everaert

Pub. info.:	Physics and technology of high-k gate dielectrics III. pp.633-644, 2006. Pennington, N.J.. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(5)

10.

Conference Proceedings

10. EFFICIENT CLEANING OF LOW-к MATERIALS USING SINGLE-WAFER CLEANING SOLUTION: A COMPATIBILITY STUDY AND ELECTRICAL CHARACTERIZATION

Q. T. Le ; J. Van Olmen ; R. Vanderheyden ; E. Kesters ; K. Kenis ; T. Conard ; W. Boullart ; M. R. Baklanov ; S. Vanhaelemeersch

Pub. info.:	Cleaning Technology in Semiconductor Device Manufacturing IX. pp.164-171, 2006. Pennington, NJ. Electrochemical Society
Title of ser.:	ECS transactions
Ser. no.:	1(3)

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Author: T. Conard