1.

Conference Proceedings
Conference Proceedings
1. Asymmetric Distribution of Charge Trap in HfO₂-Based High-k Gate Dielectrics
K. Higuchi ; T. Naito ; A. Uedono ; K. Shiraishi ; K. Torii ; M. Boero ; T. Chikyow ; S. Yamosaki ; K. Yamada ; R. Hasumuma ; K. Yamabe
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.777-788,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
2.

Conference Proceedings
Conference Proceedings
2. Control of Crystalline Microstructures in Metal Gate Electrodes for Nano CMOS Devices
K. Ohmori ; T. Chikyow ; T. Hosoi ; H. Watanabe ; K. Nakajima
Pub. info.: Dielectrics for nanosystems 3: materials science, processing, reliability, and manufacturing.  pp.201-207,  2008.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 13(2)
3.

Conference Proceedings
Conference Proceedings
3. Theoretical Studies on the Physical Properties of Poly-Si and Metal Gates/HfO₂ Related High-k Dielectrics Interfaces
K. Shiraishi ; K. Torii ; Y. Akasaka ; T. Nakayama ; T. Nakaoka ; S. Miyazaki ; T. Chikyow ; K. Yamada ; Y. Nara
Pub. info.: Physics and technology of high-k gate dielectrics III.  pp.479-494,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 1(5)
4.

Conference Proceedings
Conference Proceedings
4. A Combinatorial Study of Metal Gate/HfO₂ MOSCAPS
M. L. Green ; K. Chang ; I. Takeuchi ; T. Chikyow
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.341-350,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
5.

Conference Proceedings
Conference Proceedings
5. Physics of Metal/High-k Interfaces
T. Nakayama ; K. Shiraishi ; S. Miyazaki ; Y. Akasaka ; T. Nakaoka ; K. Torii ; A. Ohta ; P. Ahmet ; K. Ohmori ; N. Umezawa ; H. Watanabe ; T. Chikyow ; Y. Nara ; H. Iwal ; K. Yamada
Pub. info.: Physics and technology of high-k gate dielectrics 4.  pp.129-142,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 3(3)
6.

Conference Proceedings
Conference Proceedings
6. New Theory of Effective Workfunctions at Metal/High-k Dielectric Interfaces - Application to Metal/High-k HfO₂ and La₂O₃ Dielectric Interfaces
K. Shiraishi ; T. Nakayatna ; Y. Akasaka ; S. Miyazaki ; T. Nakaoka ; K. Ohmori ; P. Abmet ; K. Torii ; H. Watanabe ; T. Chikyow ; Y. Nara ; H. Iwai ; K .Yamada
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.25-40,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
7.

Conference Proceedings
Conference Proceedings
7. Extensive Studies for Effects of Nitrogen Incorporation into Hf-Based High-k Gate Dielectrics
N. Umezawa ; K. Shiraishi ; H. Watanabe ; K. Toni ; Y. Akasaka ; S. Inumiya ; M. Boero ; A. Uedono ; S. Miyazaki ; T. Ohno ; T. Chikyow ; K. Yamabe ; Y. Nara ; K. Yamada
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.63-78,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)
8.

Conference Proceedings
Conference Proceedings
8. Theoretical Studies on Metal/High-k Gate Stacks
K. Shiraishi ; Y. Akasaka ; G. Nakamura ; T. Nakayama ; S. Miyazaki ; H. Watanabe ; A. Ohta ; K. Ohmori ; T. Chikyow ; Y. Nara ; K. Yamabe ; K. Yamada
Pub. info.: Advanced gate stack, source/drain and channel engineering for Si-based CMOS 3 : new materials, processes and equipment.  pp.191-204,  2007.  Pennington, NJ.  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 6(1)
9.

Conference Proceedings
Conference Proceedings
9. Combinatorial Fabrication and Characterization of Oxide and Metal Thin Film Composition Spreads
P. Ahmet ; T. Nagata ; D. Kukuruznyak ; K. Ohmori ; K. Kakushima ; K. Tsutsui ; T. Chikyow ; H. Iwai
Pub. info.: Dielectrics for nanosystems II: materials science, processing, reliability, and manufacturing.  pp.79-90,  2006.  Pennington, N.J..  Electrochemical Society
Title of ser.: ECS transactions
Ser. no.: 2(1)