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14 results

Conference Proceedings

1. Behavior of Micropipes during Growth in 4H-SiC

Vouroutzis, N. ; Yakimova, R. ; Syvaejaervi, M. ; Jacobson, H. ; Stoemenos, J. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.395-398, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

2. Effect of Temperature Treatment on Au/Pd Schottky Contacts to 4H-SiC

Kassamakova, L. ; Kakanakov, R. ; Yakimova, R. ; Kakanakova-Georgieva, A. ; Syvaejaervi, M. ; Wilzen, L. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.929-932, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

3. Thermopower Measurements in 4H-SiC and Theoretical Calculations Considering the Phonon Drag Effect

Grivickas, V. ; Stoelzer, M. ; Velmre, E. ; Udal, A. ; Grivickas, P. ; Syvaejaervi, M. ; Yakimova, Rositza ; Bikbajevas, V.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.491-494, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

4. Defect Energetics in 4H-SiC Sublimation Epi-Layers Grown on LPE Buffers With Reduced Micropipe Density

Yakimova, R. ; Syvaejaervi, M. ; Jacobsson, H. ; Kakanakova-Georgieva, A. ; Tuomi, T. ; Rendakova, S. ; Dmitriev, V. ; Janzen, E.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

5. As-Grown 4H-SiC Epilayers with Magnetic Properties

Syvaejaervi, M. ; Stanciu, V. ; Izadifard, M. ; Chen, W.M. ; Buyanova, I.A. ; Svendlindh, P. ; Yakimova, R.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.747-750, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

Conference Proceedings

6. Influence of Epitaxial Layer on SiC Schottky Diode Gas Sensors Operated under High-Temperature Conditions

Nakagomi, S. ; Shinobu, H. ; Uneus, L. ; Lundstrom, I. ; Ekedahl, L.-G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Spetz, A. L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1423-1426, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

7. High-Resolution XRD Evaluation of Thick 4H-SiC Epitaxial Layers

Jacobsson, Henrik ; Yakimova, R. ; Syvaejaervi, M. ; Birch, J. ; Tuomi, T. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.291-294, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

8. Presence of Hydrogen in SiC

Henry, A. ; Magnusson, B. ; Linnarsson, M.K. ; Ellison, A. ; Syvaejaervi, M. ; Yakimova, R. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.373-376, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

Conference Proceedings

9. The Effect of Hydrogen Diffusion in p- and n-Type SiC Schottky Diodes at High Temperatures

Uneus, L. ; Nakagomi, S. ; Linnarsson, M. ; Janson, M.S. ; Svensson, B.G. ; Yakimova, R. ; Syvaejaervi, M. ; Henry, A. ; Janzen, E. ; Ekedahl, L.-G. ; Lundstrom, I. ; Spetz, A. L.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1419-1422, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

10.

Conference Proceedings

10. Growth of 3C-SiC Using Off-Oriented 6H-SiC Substrates

Syvaejaervi, M. ; Yakimova, R. ; Jacobsson, H. ; Janzen, E.

Pub. info.:	Silicon carbide and related materials : ECSCRM2000, proceedings of the 3rd European Conference on Silicon Carbide and Related Materials, Kloster Banz, Germany, September 2000. pp.143-146, 2001. Uetikon-Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	353-356

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