1.

Conference Proceedings
Conference Proceedings
1. Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation
Agueev, O.A. ; Svetlichnyi, A.M. ; Razgonov, R.N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.901-904,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
2.

Conference Proceedings
Conference Proceedings
2. Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts
Litvinov, V.L. ; Demakov, K.D. ; Agueev, O.A. ; Svetlichnyi, A.M. ; Konakova, R.V. ; Lytvyn, P.M. ; Milenin, V.V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.905-908,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
3.

Conference Proceedings
Conference Proceedings
3. Effect of Rapid Thermal Annealing Conditions on Parameters of Ni/21R-SiC Contacts
Litvinov, V.L. ; Demakov, K.D. ; Agueev, O.A. ; Svetlichnyi, A.M. ; Konakova, R.V. ; Lytvyn, P.M. ; Milenin, V.V.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.905-908,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
4.

Conference Proceedings
Conference Proceedings
4. Influence of Rapid Thermal Annealing on Ni/6H-SiC Contact Formation
Agueev, O.A. ; Svetlichnyi, A.M. ; Razgonov, R.N.
Pub. info.: Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001.  pp.901-904,  2002.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 389-393
5.

Conference Proceedings
Conference Proceedings
5. Optimization of Chamber Design and Rapid Thermal Processing Regimes for SiC Substrates by Temperature and Thermal Stress Distribution
Agueev, O.A. ; Svetlichnyi, A.M. ; Klovo, A.G. ; Kocherov, A.N. ; Izotovs, D.A.
Pub. info.: Silicon carbide and related materials 2002 : ECSCRM2002, proceedings of the 4th European Conference on Silicon Carbide and Related Materials, September 2-5, 2002, Linköping, Sweden.  pp.107-110,  2003.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 433-436