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Conference Proceedings

1. Formation of Ultra Shallow Donors in Silicon by Long-Term-Annealing at 470 °C

Aberg,D. ; Hallberg,T. ; Svensson,B.G. ; Lindstrom,J.L. ; Kleverman,M.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.385-390, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

2. Interaction between copper and irradiation-induced defects in crystalline silicon

Svensson,B.G. ; Aboelfotoh,M.O.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.179-184, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

3. A new defect observed in annealed highly phosphorus doped electron-irradiated silicon

Lindstrom,J.L. ; Svensson,B.G. ; Chen,W.M.

Pub. info.:	Proceedings of the 16th International Conference on Defects in Semiconductors : Lehigh University, Bethlehem, Pennsylvania, 22-26 July 1991. Pt.1 pp.333-338, 1992. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	83-87

Conference Proceedings

4. Deuterium Incorporation in Acceptor Doped Epitaxial Layers of 6H-SiC

Linnarsson,M.K. ; Janson,M. ; Schoner,A. ; Nordell,N. ; Karlsson,S. ; Svensson,B.G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part2 pp.761-764, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

5. Effect of Interfacial Hydrogen in CoSi2/Si(100)Schottky-Barrier Contacts

Aboelfotoh,M.O. ; Marwick,A.D. ; Svensson,B.G.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.3 pp.1653-1658, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

6. Formation of Oxygen Dimers in Silicon during Electron-Irradiation Above 250 °C

Lindstrom,J.L. ; Hallberg,T. ; Aberg,D. ; Svensson,B.G. ; Murin,L.I. ; Markevich,V.P.

Pub. info.:	Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997. Part1 pp.367-372, 1997. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	258-263

Conference Proceedings

7. Annealing of Electron Irradiated P-,As-,Sb- and Bi-Doped Czochralski Silicon

Hallberg,T. ; Lindstrom,J.L. ; Svensson,B.G. ; Swiatek,K.

Pub. info.:	Proceedings of the 17th International Conference on Defects in Semiconductors : ICDS-17, Gmunden, Austria, July 18-23, 1993. Pt.2 pp.1239-1244, 1994. Zurich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	143-147

Conference Proceedings

8. Electrically Active Defects in n-Type 4H- and 6H-SiC

Doyle,J.P. ; Aboelfotoh,M.O. ; Svensson,B.G.

Pub. info.:	Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997. Part1 pp.565-568, 1998. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	264-268

Conference Proceedings

9. Overlapping Deep Levels in Electron-Bombarded n-Type Silicon

Svensson,B.G. ; Larsson,B.M.S. ; Ryden,K.-H.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part3 pp.1211-1216, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

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Conference Proceedings

10. Infrared Absorption Studies of the Divacancy in Silicon New Properties of and Interpretation of the 0.34 eV Peak

Svensson,J. ; Svensson,B.G. ; Monemar,B.

Pub. info.:	Proceedings of the 15th International Conference on Defects in Semiconductors : Budapest, Hungary, August 22-26, 1988. Part1 pp.451-456, 1989. Aederlmannsdorf, Switzwelns. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	38-41

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Author: Svensson,B.G.