1.

Conference Proceedings
Conference Proceedings
1. INFRARED STUDIES OF THE DOUBLE ACCEPTOR ZINC IN SILICON
Dornen, A. ; Kienle, R. ; Thonke, K. ; Stolz, P. ; Pensl, G. ; Grunebau, D. ; Stolwijk, N.A.
Pub. info.: Impurities, defects, and diffusion in semiconductors : bulk and layered structures : symposium held November 27-December 1, 1989, Boston, Massachusetts, U.S.A..  pp.21-26,  1990.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 163
2.

Conference Proceedings
Conference Proceedings
2. HYDROGEN NEUTRALIZATION OF CHALCOGEN DOUBLE DONOR CENTERS IN SINGLE-CRYSTAL SILICON
Pensl, G. ; Roos, G. ; Stolz, P. ; Johnson, N. M. ; Holm, C.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.241-246,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
3.

Conference Proceedings
Conference Proceedings
3. *ELECTRONIC DEFECTS IN SILICON AFTER TRANSIENT ISOTHERMAL ANNEALING
Pensl, G. ; Schulz, M. ; Stolz, P. ; Johnson, N. M. ; Gibbons, J. F. ; Hoyt, J. L.
Pub. info.: Energy beam-solid interactions and transient thermal processing : symposium held November 1983 in Boston, Massachusetts, U.S.A..  pp.347-358,  1984.  New York.  North-Holland
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 23