1.

Conference Proceedings
Conference Proceedings
1. THERMAL STABILITY OF EL2 IN GaAs
Boddart, X. ; Letartre, X ; Stievenard, D. ; Bourgoin ,J.. C.
Pub. info.: Advances in materials, processing, and devices in III-V compound semiconductors.  pp.3-8,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 144
2.

Conference Proceedings
Conference Proceedings
2. BISTABLE DEFECTS INDUCED IN GaAs BY H2 PLASMA PROCESS
Boddaert, X ; Vuillaume, D. ; Stievenard, D. ; Bourgoin, J. C. ; Boher, P.
Pub. info.: Rapid thermal annealing/chemical vapor deposition and integrated processing : sympoisium held April 25-28, 1989, San Diego, California, U.S.A..  pp.425-430,  1989.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 146
3.

Conference Proceedings
Conference Proceedings
3. *INTRINSIC DEFECTS IN GaAs - THE CASE OF EL2
von Bardeleben, H. J. ; Stievenard, D.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.351-362,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
4.

Conference Proceedings
Conference Proceedings
4. POINT DEFECTS, DISLOCATIONS IN GaAs AND MATERIAL HOMOGENEITY
Bourgoin, J. C. ; von Bardeleben, H. J. ; Lim, H. ; Stievenard, D.
Pub. info.: Defects in electronic materials : symposium held November 30-December 3, 1987, Boston, Massachusetts, U.S.A..  pp.411-414,  1988.  Pittsburgh, Pa..  Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 104
5.

Conference Proceedings
Conference Proceedings
5. INTERACTION BETWEEN DEFECTS AND TUNNELING EFFECT IN HETEROSTRUCTURES
Stievenard, D. ; Lannoo, M.
Pub. info.: Physics and applications of defects in advanced semiconductors : symposium held November 29-December 1, 1993, Boston, Massachusetts, U.S.A..  pp.61-,  1994.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 325
6.

Conference Proceedings
Conference Proceedings
6. GAS SENSOR USING AN ALUMINIUM-POROUS SILICON JUNCTION APPLICATION TO THE DETECTION OF NON-ZERO MOLECULAR DIPOLE MOMENT
Stievenard, D. ; Deresmes, D.
Pub. info.: Microcrystalline and nanocrystalline semiconductors : Symposium held November 29-December 2, 1994, Boston, Massachusetts, U.S.A..  pp.599-,  1995.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 358
7.

Conference Proceedings
Conference Proceedings
7. Rutherford Backscattering and Photoluminescence Studies of Erbium Implanted GaAs
Daly, S. E. ; Henry, M. O. ; Alves, E. ; Soares, J. C. ; Gwilliam, R. ; Sealy, B. J. ; Freitag, K. ; Vianden, R. ; Stievenard, D.
Pub. info.: Rare earth doped semiconductors II : symposium held April 8-10, 1996, San Francisco, California, U.S.A..  pp.173-,  1996.  Pittsburgh.  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 422
8.

Conference Proceedings
Conference Proceedings
8. dc Current-Voltage Characteristics and Admittance Spectroscopy of an Al-Porous Si Barrier
Khirouni, K. ; Bourgoin, J. C. ; Borgi, K. ; Maaref, H. ; Deresmes, D. ; Stievenard, D.
Pub. info.: Advances in microcrystalline and nanocrystalline semiconductors, 1996 : symposium held December 2-6, 1996, Boston, Massachusetts, U.S.A..  pp.619-,  1997.  Pittsburgh, Pa..  MRS - Materials Research Society
Title of ser.: Materials Research Society symposium proceedings
Ser. no.: 452