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Conference Proceedings

1. Photoluminescence and EPR of phosphorus vacancies in ZnGeP2

Moldovan, M. ; Stevens, K. T. ; Halliburton, L. E. ; Schunemann, P. G. ; Pollak, T. M. ; Setzler, S. D. ; Giles, N. C.

Pub. info.:	Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.. pp.445-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	607

Conference Proceedings

2. Photoinduced changes in the charge states of native donors and acceptors in ZnGeP2

Stevens, K. T. ; Setzler, S. D. ; Schunemann, P. G. ; Pollak, T. M. ; Giles, N. C. ; Halliburton, L. E.

Pub. info.:	Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.. pp.379-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	607

Conference Proceedings

3. Temperature dependent hall measurements on CdGeAs2

Ptak, A. J. ; Jain, S. ; Stevens, K. T. ; Myers, T. H. ; Schunemann, P. G. ; Setzler, S. D. ; Pollak, T. M.

Pub. info.:	Infrared applications of semiconductors III : symposium held November 29-December 2, 1999, Boston, Massachusetts, U.S.A.. pp.427-, 2000. Warrendale, Pa.. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	607

Conference Proceedings

4. Electron-Nuclear Double Resonance Study of the Zinc Vacancy in Zinc Germanium Phosphide (ZnGeP2)

Stevens, K. T. ; Setzler, S. D. ; Halliburton, L. E. ; Fernelius, N. C. ; Schunemann, P. G. ; Pollak, T. M.

Pub. info.:	Infrared applications of semiconductors II : symposium held December 1-4, 1997, Boston, Massachusetts, U.S.A.. pp.549-, 1998. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	484