1.

Conference Proceedings
Conference Proceedings
1. On the Behaviour of the Divacancy in Silicon during Anneals between 200 and 350°C
Trauwaert,M.-A. ; Vanhellemont,J. ; Maes,H.E. ; Bavel,A.-M.Van ; Langouche,G. ; Stesmans,A. ; Clauws,P.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1147-1152,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
2.

Conference Proceedings
Conference Proceedings
2. Buried SiO2 Films:Interfaces and Defects
Stesmans,A.
Pub. info.: Proceedings of the 13th International Conference on Defects in Insulating Materials, ICDIM 96, July 15-19, 1996, Wake Forest University, Winston-Salem, NC 27109, USA.  pp.1-6,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 239-241
3.

Conference Proceedings
Conference Proceedings
3. The Bending of Si Crystals as a Means to Determine the Orientation of Defects in Si
Bavel,A.-M.Van ; Degroote,S. ; Vantomme,A. ; Stesmans,A. ; Langouche,G.
Pub. info.: Proceedings of the 18th International Conference on Defects in Semiconductors : ICDS-18, Sendai, Japan, July 23-28, 1995.  pp.1515-1520,  1995.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 196-201
4.

Conference Proceedings
Conference Proceedings
4. Electron spin resonance features of the Pb1 interface defect in thermal(100)Si/SiO2
Stesmans,A. ; Afanas'ev,V.V.
Pub. info.: Defects in semiconductors, icds-19 : proceedings of the 19th International Conference on Defects in Semiconductors, Aveiro, Portugal, July 1997.  Part3  pp.1713-1718,  1997.  Zurich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 258-263
5.

Conference Proceedings
Conference Proceedings
5. Observation of Carbon Clusters at the 4H-SiC/SiO2 Interface
Afanas'ev,V.V. ; Stesmans,A. ; Harris,C.I.
Pub. info.: Silicon carbide, III-nitrides and related materials, ICSCIII-N'97 : proceedings of the International Conference on Silicon Carbide, III-Nitrides and Related Materials, Stockholm, Sweden, September 1997.  Part2  pp.857-860,  1998.  Zuerich, Switzerland.  Trans Tech Publications
Title of ser.: Materials science forum
Ser. no.: 264-268