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14 results

Conference Proceedings

1. DEPTH PROFILING OF OXYGEN VACANCY DEFECT GENERATION IN BURIED SiO2

Stesmans, A. ; Vanheusden, K.

Pub. info.:	Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.. pp.299-306, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	284

Conference Proceedings

2. LOCALIZATION AND ELECTRIC-FIELD MODULATED ELECTRON SPIN RESONANCE OF A SHALLOW DONOR IN SIMOX

Vanheusden, K. ; Stesmans, A.

Pub. info.:	Amorphous insulating thin films : symposium held December 1-4, 1992, Boston, Massachusetts, U.S.A.. pp.573-578, 1993. Pittsburgh, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	284

Conference Proceedings

3. Properties of Ultrathin High-k Dielectrics on Si Probed by Electron Spin Resonance-Active Defects: Interfaces and Interlayers

Stesmans, A. ; Afanas'ev, V.V.

Pub. info.:	Silicon nitride and silicon dioxide thin insulating films VII : proceedings of the international symposium. pp.66-78, 2003. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2003-2

Conference Proceedings

4. Phase-transition induced change of electron-surface spin-flip scattering revealed from CESR on metallic Li globules embedded in n-irradiated LiF

Stesmans, A.

Pub. info.:	Structure and reactivity of surfaces : proceedings of a European conference, Trieste, Italy, September 13-16, 1988. pp.871-, 1989. Amsterdam. Elsevier
Title of ser.:	Studies in surface science and catalysis
Ser. no.:	48

Conference Proceedings

5. SiC/SiO2 Interface States: Properties and Models

Afanas'ev, V. V. ; Ciobanu, F. ; Dimitrijev, S. ; Pensl, G. ; Stesmans, A.

Pub. info.:	Silicon carbide and related materials 2004 : ECSCRM 2004 : proceedings of the 5th European Conference on Silicon Carbide and Related Materials, August 31 - September 4 2004, Bologna, Italy. pp.563-568, 2005. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	483-485

Conference Proceedings

6. Low Temperature Anneal of the Divacancy in P-Type Silicon

Trauwaert, M.-A. ; Vanhellemont, J. ; Maes, H. E. ; Bavel, A.-M. Van ; Langouche, G. ; Stesmans, A. ; Clauws, P.

Pub. info.:	Defect and impurity engineered semiconductors and devices : symposium held April 17-21, 1995, San Francisco, California, U.S.A.. pp.953-, 1995. Pittsburgh, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	378

Conference Proceedings

7. Correlation between development of leakage current and hydrogen ionization in ultrathin silicon dioxide layers

Afanas'ev, V. V. ; Stesmans, A.

Pub. info.:	Structure and electronic properties of ultrathin dielectric films on silicon and related structures : symposium held November 29-December 1, 1999, Boston, Massachusetts, U.S.A.. pp.195-, 2000. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	592

Conference Proceedings

8. Oxidation of Silicon Carbide: Problems and Solutions

Afanas'ev, V.V. ; Bassler, M. ; Pensl, G. ; Stesmans, A.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.961-966, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

9. Similarities between separation by implanted oxygen and bonded and etchback silicon-on-insulator materials as revealed by electron spin resonance

Vanheusden, K. ; Stesmans, A.

Pub. info.:	Proceedings of the Sixth International Symposium on Silicon-on-Insulator Technology and Devices. pp.197-202, 1994. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	1994-11

10.

Conference Proceedings

10. Point Defects and Traps in Stacks of Ultrathin High-k Metal Oxides on Si Probed by Electron Spin Resonance: Si/HfO2 System and N Incorporation

Stesmans, A. ; Afanas'ev, V. ; Clemer, K. ; Chen, F. ; Campbell, S.A.

Pub. info.:	Silicon nitride, silicon dioxide thin insulating films, and other emerging dieletrics VIII : proceedings of the international symposium. pp.403-416, 2005. Pennington, N.J.. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-01

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