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14 results

Conference Proceedings

1. In Situ Spectroscopic Ellipsometry Studies of the Interaction Process of Ethene With Si Surfaces During SiC Formation

Wohner, T. ; Stauden, Th. ; Cimalla, V. ; Eichhorn, G. ; Schaefer, J. A. ; Pezoldt, J.

Pub. info.:	In situ process diagnostics and modelling : symposium held April 6-7, 1999, San Francisco, California, U.S.A.. pp.95-, 1999. Warrendale, PA. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	569

Conference Proceedings

2. On the role of foreign atoms in the optimization of 3C-SiC/Si heterointerfaces

Masri, P. ; Moreaud, N. ; Averous, M. ; Stauden, Th. ; Wohner, T. ; Pezoldt, J.

Pub. info.:	Wide-bandgap semiconductors for high-power, high-frequency, and high temperature applications--1999 : symposium held April 5-8, 1999, San Francisco, California, U.S.A.. pp.213-, 1999. Warrendale, PA. MRS-Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	572

Conference Proceedings

3. Structural and Elasticity-Based Properties of SiC-based Interfaces: Their Relevance to the Heteroepitaxy of III-V Nitrides

Masri, P. ; Laridjani, M. Rouhani ; Stauden, Th. ; Pezoldt, J. ; Averous, M.

Pub. info.:	GaN and related alloys - 2000 : symposium held November 27-December 1, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	639

Conference Proceedings

4. In Situ RHEED Analysis of the Ge-Induced Surface Reconstructions on 6H-SiC(0001)

Weih, P. ; Stauden, Th. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.725-728, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

Conference Proceedings

5. Stress Manipulation in CVD grown SiC on Si bv Mono- and submonolaver Ge Drecoverages

Pezoldt, J. ; Zgheib, Ch. ; Morales, F. M. ; Forster, Ch. ; Stauden, Th. ; Wang, Ch. ; Masri, P. ; Leycuras, A. ; Ferro, G. ; Ambacher, O.

Pub. info.:	EUROCVD-15, fifteenth European Conference on Chemical Vapor Deposition : proceedings of the international symposium. pp.707-714, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-09

Conference Proceedings

6. Characterization of SiC Grown on Ge Modified Silicon Substrates

Pezoldt, J. ; Stauden, Th. ; Foerster, Ch. ; Masri, P.

Pub. info.:	Silicon carbide--materials, processing and devices : symposium held November 27-29, 2000, Boston, Massachusetts, U.S.A.. 2001. Warrendale, Pa.. Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	640

Conference Proceedings

7. In Situ Monitoring of the Effect of Ge on the SiC Growth on (111)Si Surfaces

Wohner, T. ; Stauden, Th. ; Schaefer, J. A. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.281-284, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

8. The Influence of Foreign Atoms on the early Stages of SiC Growth on (111)Si

Pezoldt, J. ; Masri, P. ; Rouhani Laridjani, M. ; Averous, M. ; Wohner, T. ; Schaefer, J. A. ; Stauden, Th. ; Ecke, G. ; Pieterwas, R. ; Spieβ, L.

Pub. info.:	Silicon carbide and related materials - 1999 : ICSCRM'99, proceedings of the International Conference on Silicon Carbide and Related Materials - 1999, Research Triangle Park, North Carolina, USA, October 10-15, 1999. pp.289-292, 2000. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	338-342(1)

Conference Proceedings

9. Influence of the Ge Coverage Prior to Carbonization on the Structure of SiC Grown on Si(111)

Morales, F.M. ; Zgheib, Ch. ; Molina, S.I. ; Araujo, D. ; Garcia, R. ; Fernandez, C. ; Sanz-Hervas, A. ; Masri, P. ; Weih, P. ; Stauden, Th. ; Ambacher, O. ; Pezoldt, J.

Pub. info.:	Silicon carbide and related materials 2003 : ICSCRM, 2003 : proceedings of the 10th International Conference on Silicon Carbide and Related Materials 2003, Lyon, France, October 5-10, 2003. pp.297-300, 2004. Uetikon-Zuerich. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	457-460

10.

Conference Proceedings

10. Silicon Carbide Buffer Layers for Nitride Growth on Si

Masri, P. ; Herro, Z. ; Stauden, Th. ; Pezoldt, J. ; Sumiya, M. ; Averous, M.

Pub. info.:	Silicon carbide and related materials 2001 : ICSCRM2001, proceedings of the International Conference on Silicon Carbide and Related Materials 2001, Tsukuba, Japan, October 28-November 2, 2001. pp.1485-1488, 2002. Zuerich, Switzerland. Trans Tech Publications
Title of ser.:	Materials science forum
Ser. no.:	389-393

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