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Conference Proceedings

1. DETERMINATION OF MINIMUM OXYGEN PRECIPITATE GROWTH CONDITIONS FOR GElTERING OF COPPER AND NICKEL

Seacrist, M. ; Stinson, M. ; Libbert, I. ; Standley, R. ; Binns, J.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.638-646, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2

Conference Proceedings

2. An Investigation of the Limit of Detection and the Scattering Dependence of the Optical Precipitate Profiler (OPP)

Mule'stagno, L. ; Hill, D. E. ; Standley, R. ; Olmo, M. ; Holzer, J. C. ; Falster, R. ; Fraundorf, P.

Pub. info.:	Defect and impurity engineered semiconductors, II : symposium held April 13-17, 1998, San Francisco, California, U.S.A.. pp.627-, 1998. Warrendale, Pa. MRS - Materials Research Society
Title of ser.:	Materials Research Society symposium proceedings
Ser. no.:	510

Conference Proceedings

3. 64 Si:C Epitaxial Wafer for Improved Sub-100nm CMOS Transistor Performance

Standley, R. ; Mansoori, M. ; Miles, D. ; Chakravarthi, S. ; Seacrist, M. ; Wise, R. ; Torack, T. ; Ries, M.

Pub. info.:	Advanced gate stack, source/drain and channel engineering for Si-based CMOS, new materials, processes, and equipment : proceedings of the international symposium. pp.535-541, 2005. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2005-05

Conference Proceedings

4. DETERMINATION OF MINIMUM OXYGEN PRECIPITATE GROWTH CONDITIONS FOR GElTERING OF COPPER AND NICKEL

Seacrist, M. ; Stinson, M. ; Libbert, I. ; Standley, R. ; Binns, J.

Pub. info.:	Semiconductor silicon 2002 : proceedings of the ninth International Symposium on Silicon Materials Science and Technology. pp.638-646, 2002. Pennington, NJ. Electrochemical Society
Title of ser.:	Electrochemical Society Proceedings Series
Ser. no.:	2002-2